Beol thin film resistor
AssigneeInternational Business Machines Corporation
InventorsAndrew Tae Kim, Baozhen Li, Ernest Y. Wu, Chih-Chao Yang
Life of this patent
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Abstract
Back end of the line precision resistors that allow for high currents and for configuration as an eFuse by embedding a single thin film high resistive metal material within a dielectric layer, wherein the resisters are coupled to sidewalls of adjacent metal interconnects are described. The resistors can be formed in the metal one (M1) dielectric layer and can be coupled to sidewalls of the M1 interconnects. Also described are processes for fabricating integrated circuits including the resistors and/or e-Fuses.
Claims20
An integrated circuit comprising:
- a dielectric layer including one or more metal interconnects:
- a resistor formed in a recess of the dielectric layer of a material having a resistivity greater than doped polysilicon;
- wherein the resistor has sidewalls, wherein only the resistor sidewalls are electrically coupled to sidewalls of adjacent metal interconnects;
- wherein the resistor in the recess of the dielectric layer, the dielectric layer outside of the recess, and the one or more metal interconnects have coplanar upper surfaces;
- and
- a cap layer on the coplanar surfaces of the resistor, the adjacent metal interconnects electrically coupled to the sidewalls they resistor, and the dielectric layer such that the resistor is embedded under the cap layer within the recess of the dielectric layer.
A process for fabricating a back end of line resistor, the process comprising:
- depositing a dielectric layer onto a substrate;
- patterning the dielectric layer to form a plurality of trenches;
- removing a portion of the dielectric layer between at least two adjacent trenches to form a recess;
- conformally depositing a metal layer onto the dielectric layer;
- depositing a metal conductor onto the metal layer filling the trenches and forming an overburden thereon;
- removing the overburden to form metal interconnects, wherein the metal layer remains on a surface of the recessed dielectric layer so as to define a resistor, and wherein the resistor has sidewalls, wherein only the resistor sidewalls are electrically coupled to sidewalls of the at least two adjacent metal interconnects;
- and
- depositing a cap layer onto the resistor and the dielectric layer, wherein the resistor is embedded within the dielectric layer.
An integrated circuit comprising:
- a dielectric layer;
- at least one eFuse structure in a recess in the dielectric layer comprising a tantalum nitride metal, wherein the eFuse structure has sidewalls, wherein only the eFuse sidewalls are in contact with sidewalls of contact structures of an anode and a cathode, and wherein the eFuse in the recess of the dielectric layer, the dielectric layer outside of the recess, and the anode and the cathode have coplanar upper surfaces.
Dependencies are inferred from the claim text.