Semiconductor devices and methods of forming the same
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsCheng-Lung Yang, CHIH-HUNG Su, Chen-Shien Chen, Hon-Lin Huang, Kun-Ming Tsai, Wei-Je Lin
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Abstract
Semiconductor devices and methods of forming the same are disclosed. One of the semiconductor devices includes a first conductive layer, an organic layer, a silicon layer, a magnetic layer and a second conductive layer. The organic layer is disposed over and exposes a portion of the first conductive layer. The silicon layer is disposed on and in contact with the organic layer. The magnetic layer is disposed over the first conductive layer. The second conductive layer is disposed over the organic layer and the magnetic layer to electrically connect the first conductive layer.
Claims20
A semiconductor device, comprising:
- a first conductive layer;
- an organic layer disposed over and exposing a portion of the first conductive layer;
- a silicon layer disposed on and in contact with the organic layer;
- a magnetic layer disposed over the first conductive layer;
- and
- a second conductive layer disposed over the organic layer and the magnetic layer to electrically connect the first conductive layer.
A semiconductor device, comprising:
- a first conductive layer;
- an organic layer disposed aside the first conductive layer;
- a silicon layer disposed between the organic layer and the first conductive layer;
- and
- a magnetic layer disposed over the first conductive layer.
A method of forming a semiconductor device, comprising:
- forming an organic layer over a first conductive layer, wherein a portion of the first conductive layer is exposed;
- forming a silicon layer on the organic layer, wherein the silicon layer is in contact with the organic layer;
- forming a magnetic layer over the first conductive layer;
- and
- forming a second conductive layer over the organic layer and the magnetic layer to electrically connect the first conductive layer.
Dependencies are inferred from the claim text.