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US 2019/0295912 A1Published application
Semiconductor Device and Method of Manufacture
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsChen-Hua Yu, Chien-Hsun Lee, Jiun Yi Wu
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Abstract
An integrated fan out package is utilized in which the dielectric materials of different redistribution layers are utilized to integrate the integrated fan out package process flows with other package applications. In some embodiments an Ajinomoto or prepreg material is utilized as the dielectric in at least some of the overlying redistribution layers.
Claims20
A method of manufacturing a semiconductor device, the method comprising:
- encapsulating a first semiconductor die and a second semiconductor die with an encapsulant;
- forming a first redistribution layer over the encapsulant, the first redistribution layer comprising a first dielectric material;
- forming a second redistribution layer over the encapsulant different from the first redistribution layer, the second redistribution layer comprising both the first dielectric material and a second dielectric material different from the first dielectric material, and
- forming a first via through both the first dielectric material of the second redistribution layer and the second dielectric material of the second redistribution layer.
1 more element
A method of manufacturing a semiconductor device, the method comprising:
- encapsulating a first semiconductor die and a second semiconductor die with an encapsulant;
- forming a first redistribution layer over the encapsulant, the forming the first redistribution layer comprising:
- forming a first dielectric material over the encapsulant;
- forming a glue layer over the first dielectric material;
- and
- forming a first conductive line over the glue layer;
- forming a second redistribution layer over the first redistribution layer, the forming the second redistribution layer comprising:
- forming a second dielectric material different from the first dielectric material, the second dielectric material extending from a first side of the second redistribution layer to a second side of the second redistribution layer opposite the first side of the second redistribution layer;
- and
- forming a conductive via through the second dielectric material without a glue layer between the conductive via and the second dielectric material.
7 more elements
A semiconductor device comprising:
- a first semiconductor die separated from a second semiconductor die;
- an encapsulant encapsulating the first semiconductor die and the second semiconductor die;
- a first redistribution layer over the encapsulant, the first redistribution layer comprising:
- a first dielectric layer;
- a first conductive via extending through the first dielectric layer;
- and
- a glue layer located between the first dielectric layer and the first conductive via;
- and
- a second redistribution layer over the first redistribution layer, the second redistribution layer comprising:
- a second dielectric layer;
- and
- a second conductive via extending through the second dielectric layer, the second conductive via being free of a glue layer.
9 more elements
Dependencies are inferred from the claim text.