Semiconductor device
AssigneeMitsubishi Electric Corporation
InventorSeiya NAKANO
Life of this patent
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Abstract
A semiconductor device includes a surface metal formed on a substrate, a first protective film formed on the surface metal, a second protective film having a first portion provided on the first protective film and a second portion continuing to the first portion and provided on the surface metal and being transparent to light, and a metal film having a main body portion provided on the surface metal and a run-on portion continuing to the main body portion and running onto the first protective film, wherein the main body portion is thicker than the first protective film, the first portion is thicker than the run-on portion, and the second portion is thicker than the main body portion.
Claims18
A semiconductor device comprising:
- a surface metal formed on a substrate;
- a first protective film formed on the surface metal;
- a second protective film having a first portion provided on the first protective film and a second portion continuing to the first portion and provided on the surface metal and being transparent to light;
- and
- a metal film having a main body portion provided on the surface metal and a run-on portion continuing to the main body portion and running onto the first protective film,
- wherein the main body portion is thicker than the first protective film, the first portion is thicker than the run-on portion, and the second portion is thicker than the main body portion.
A semiconductor device comprising:
- a surface metal formed on a substrate;
- a first reference protective film formed on the surface metal;
- a second reference protective film formed on the surface metal and having an area which is smaller than that of the first reference protective film;
- a support protective film configured to cover partially the first reference protective film and the second reference protective film;
- and
- a metal film having a main body portion provided on the surface metal, a second run-on portion continuing to the main body portion and running onto an entire portion of an upper surface of the second reference protective film which is not covered by the support protective film, and a first run-on portion continuing to the main body portion and running onto part of a portion of an upper surface of the first reference protective film which is not covered by the support protective film.
A semiconductor device comprising:
- a surface electrode formed on a substrate;
- an external electrode soldered to the surface electrode;
- and
- a thickness monitor formed on the substrate;
- wherein the thickness monitor has:
- a plurality of pads provided at different intervals;
- and
- a monitor metal covering the plurality of pads and formed of the same material as a material of which the surface electrode is formed.
A semiconductor device comprising:
- a surface electrode formed on a substrate;
- an external electrode soldered to the surface electrode;
- and
- a thickness monitor formed on the substrate,
- wherein the thickness monitor comprises:
- a first pad formed on the substrate;
- a second pad formed on the substrate and formed so as to be spaced away from the first pad;
- a first wiring connected to the first pad;
- a second wiring connected to the first pad;
- a third wiring connected to the second pad;
- a fourth wiring connected to the second pad;
- a first metal formed on the first wiring;
- a second metal formed on the second wiring;
- a third metal formed on the third wiring;
- and
- a fourth metal formed on the fourth wiring,
- wherein a distance between the first wiring and the third wiring differs from a distance between the second wiring and the fourth wiring, and
- wherein the surface electrode, the first metal, the second metal, the third metal and the fourth metal are formed of the same material.
Dependencies are inferred from the claim text.