US 2019/0295906 A1 · PLATFORM AND METHOD OF OPERATING FOR INTEGRATED END-TO-END SELF-ALIGNED MULTI-PATTERNING PROCESS

Abstract

A method is provided for self-aligned multi-patterning on a semiconductor workpiece using an integrated sequence of processing steps executed on a common manufacturing platform hosting one or more film-forming modules, one or more etching modules, and one or more transfer modules. A workpiece having a mandrel pattern formed thereon is received into the common manufacturing platform. A sidewall spacer pattern is formed based, at least in part, on the mandrel pattern, the sidewall spacer pattern having a plurality of second features separated by a second pitch distance with the first pitch distance being greater than the second pitch distance. The integrated sequence of processing steps is executed within the common manufacturing platform without leaving the controlled environment and the transfer modules are used to transfer the workpiece between the processing modules while maintaining the workpiece within the controlled environment. Broadly, forming a sidewall spacer pattern based on the mandrel pattern.

Claims20

Dependent claims

A method of self-aligned multi-patterning on a semiconductor workpiece using an integrated sequence of processing steps executed on a common manufacturing platform hosting a plurality of processing modules including one or more film-forming modules, one or more etching modules, and one or more transfer modules, the integrated sequence of processing steps including:

receiving a workpiece into the common manufacturing platform, the workpiece having a mandrel pattern formed thereon comprising a plurality of first features separated by a first pitch distance;
using the one or more film-forming modules and the one or more etching modules, forming a sidewall spacer pattern based, at least in part, on the mandrel pattern, the sidewall spacer pattern comprising a plurality of second features separated by a second pitch distance with the first pitch distance being greater than the second pitch distance;
wherein the integrated sequence of processing steps is executed in a controlled environment within the common manufacturing platform and without leaving the controlled environment, and wherein the one or more transfer modules are used to transfer the workpiece between the plurality of processing modules while maintaining the workpiece within the controlled environment.

A method of processing materials on a semiconductor workpiece, comprising an integrated sequence of processing steps including:

receiving a workpiece into a common manufacturing platform, the workpiece having a mandrel pattern formed thereon comprising a number of mandrel lines;
conformally applying a first thin film over the mandrel pattern using a first film-forming module hosted on the common manufacturing platform;
without breaking vacuum, removing the first thin film from upper surfaces of the mandrel pattern and lower surfaces adjacent the mandrel pattern using a first etching module hosted on the common manufacturing platform to leave behind the first thin film on sidewalls of the mandrel pattern thereby forming first sidewall spacers;
and
without breaking vacuum, removing the mandrel pattern from the workpiece using a second etching module hosted on the common manufacturing platform to leave behind the first sidewall spacers to thereby form a new feature pattern comprising a number of features that is double the number of mandrel lines,
wherein the common manufacturing platform includes one or more transfer modules for transferring the workpiece between the first film-forming module, the first etching module, and the second etching module without breaking vacuum.

3 more elements

A method of processing materials on a semiconductor workpiece, comprising an integrated sequence of processing steps including:

receiving a workpiece into a common manufacturing platform, the workpiece having a mandrel pattern formed thereon comprising a number of mandrel lines;
conformally applying a first thin film over the mandrel pattern using a first film-forming module hosted on the common manufacturing platform;
without breaking vacuum, removing the first thin film from upper surfaces of the mandrel pattern and lower surfaces adjacent the mandrel pattern using a first etching module hosted on the common manufacturing platform to leave behind the first thin film on sidewalls of the mandrel pattern thereby forming first sidewall spacers;
without breaking vacuum, conformally applying a second thin film over the first sidewall spacers and mandrel pattern in a second film-forming module hosted on the common manufacturing platform;
without breaking vacuum, removing the second thin film from upper surfaces of the first sidewall spacers and mandrel pattern and lower surfaces adjacent the first sidewall spacers in a second etching module hosted on the common manufacturing platform to leave behind the second thin film on sidewalls of the first sidewall spacers thereby forming second sidewall spacers;
without breaking vacuum, removing the first sidewall spacers from the workpiece using a third etching module hosted on the common manufacturing platform to leave behind the second sidewall spacers and mandrel pattern and to thereby form a new feature pattern comprising a number of features that is triple the number of mandrel lines,
wherein the common manufacturing platform includes one or more transfer modules for transferring the workpiece between the first film-forming module, the second film-forming module, the first etching module, the second etching module, and the third etching module without breaking vacuum.

4 more elements

Dependencies are inferred from the claim text.

Platform and method of operating for integrated end-to-end self-aligned multi-patterning process

Life of this patent

Platform and method of operating for integrated end-to-end self-aligned multi-patterning process

Life of this patent

Abstract

Claims20