Platform and method of operating for integrated end-to-end area-selective deposition process

A method of selective deposition on a semiconductor workpiece using an integrated sequence of processing steps executed on a common manufacturing platform hosting a plurality of processing modules including one or more film-forming modules, one or more etching modules, and one or more transfer modules, the integrated sequence of processing steps including:

• receiving a workpiece into the common manufacturing platform, the workpiece having a target surface of a first material and a non-target surface of a second material different than the first material;
• depositing an additive material on the workpiece in one of the one or more film-forming modules, wherein the depositing is with selectivity relative to the non-target surface that results in a layer of the additive material forming on the target surface at a higher deposition rate than on the non-target surface;
• etching the workpiece in one of the one or more etching modules to remove unwanted additive material from a non-target surface;
• repeating the depositing and etching of the workpiece when a thickness of the layer of additive material on the target surface is less than a target thickness,
• wherein the integrated sequence of processing steps is executed in a controlled environment within the common manufacturing platform and without leaving the controlled environment, and wherein the one or more transfer modules are used to transfer the workpiece between the plurality of processing modules while maintaining the workpiece within the controlled environment.