Semiconductor device inspection method and semiconductor device manufacturing method
AssigneesKabushiki Kaisha Toshiba, Toshiba Electronic Devices & Storage Corporation
InventorIkuo Motonaga
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Abstract
A semiconductor device inspection method according to an embodiment includes irradiating a semiconductor chip or a metal member with first inspection light having a plurality of linear beams parallel to each other from a first direction inclining with respect to a top surface of a substrate, the semiconductor chip being disposed on the substrate, and the metal member being disposed on the semiconductor chip; obtaining a first image of the semiconductor chip irradiated with the first inspection light or the metal member irradiated with the first inspection light; and calculating first three-dimensional information of the semiconductor chip or the metal member based on the first image by using an optical cutting method.
Claims10
A semiconductor device inspection method comprising:
- irradiating a semiconductor chip or a metal member with first inspection light having a plurality of linear beams parallel to each other from a first direction inclining with respect to a top surface of a substrate, the semiconductor chip being disposed on the substrate, and the metal member being disposed on the semiconductor chip;
- obtaining a first image of the semiconductor chip irradiated with the first inspection light or the metal member irradiated with the first inspection light;
- and
- calculating first three-dimensional information of the semiconductor chip or the metal member based on the first image by using an optical cutting method.
A semiconductor device manufacturing method comprising:
- disposing a semiconductor chip on a lead frame;
- disposing a metal member on the semiconductor chip;
- irradiating the semiconductor chip or the metal member with first inspection light having a plurality of linear beams parallel to each other from a first direction inclining with respect to a top surface of the lead frame at least before disposing the metal member or after disposing the metal member, obtaining a first image of the semiconductor chip irradiated with the first inspection light or the metal member irradiated with the first inspection light, and calculating first three-dimensional information of the semiconductor chip or the metal member based on the first image by using an optical cutting method;
- and
- sealing the semiconductor chip and the metal member with a resin after calculating the first three-dimensional information.
Dependencies are inferred from the claim text.