Semiconductor device and method for manufacturing the same

A semiconductor device, comprising:

• first, second, and third metallization layers, on top of one another, that are disposed above a substrate, wherein each of the first, second, and third metallization layers comprises a respective metallization structure formed in a respective dielectric layer, wherein the second metallization layer is disposed between the first and third metallization layers;
• a conductive feature disposed in the substrate, the conductive feature comprising at least one of a source, a drain, and a gate electrode of a transistor;
• and
• a via tower structure formed within a single vertical trench that extends from the first metallization layer to the third metallization layer so as to electrically couple at least part of the respective metallization structures of the first and third metallization layers.