Platform and method of operating for integrated end-to-end cmp-less interconnect process

A method of processing materials on a semiconductor workpiece using an integrated sequence of processing steps executed on a common manufacturing platform hosting a plurality of processing modules including one or more film-forming modules, one or more etching modules, and one or more transfer modules, the integrated sequence of processing steps comprising:

• receiving the workpiece into the common manufacturing platform, the workpiece having an upper planar surface and at least one recessed feature therein;
• depositing a fill material onto the workpiece in one of the one or more film-forming modules hosted on the common manufacturing platform such that the fill material is deposited into the recessed feature;
• etching the workpiece in one of the one or more etching modules hosted on the common manufacturing platform to remove any fill material deposited on the upper planar surface and to leave behind the fill material in the recessed feature;
• and
• obtaining measurement data to determine if the fill material in the recessed feature is coplanar with the upper planar surface, or to determine if the fill material has been removed from the upper planar surface, or both, and
• repeating the depositing, etching, and measuring until the fill material in the recessed feature is coplanar with the upper planar surface,
• wherein the obtaining measurement data is performed in a workpiece measurement region located within a dedicated area of at least one of the one or more transfer modules or within a metrology module hosted on the common manufacturing platform, and
• wherein the integrated sequence of processing steps is executed in a controlled environment within the common manufacturing platform and without leaving the controlled environment, and wherein the one or more transfer modules are used to transfer the workpiece between the plurality of processing modules while maintaining the workpiece within the controlled environment.