Back to results
US 2019/0295886 A1Published application
Semiconductor device
AssigneeSamsung Electronics Co., Ltd.
InventorsByungha CHOI, Yuri MASUOKA, Yul LEE
Life of this patent
Estimating the term…
Abstract
A semiconductor device including an active pattern on a substrate; a gate structure crossing the active pattern; a source/drain pattern on the active pattern at a side of the gate structure; a contact plug on the source/drain pattern; and a conductive pattern between the source/drain pattern and the contact plug, wherein the source/drain pattern includes a barrier layer adjacent to the conductive pattern, and wherein the barrier layer includes an oxygen atom.
Claims20
A semiconductor device, comprising:
- an active pattern on a substrate;
- a gate structure crossing the active pattern;
- a source/drain pattern on the active pattern at a side of the gate structure;
- a contact plug on the source/drain pattern;
- and
- a conductive pattern between the source/drain pattern and the contact plug,
- wherein the source/drain pattern includes a barrier layer adjacent to the conductive pattern, and
- wherein the barrier layer includes an oxygen atom.
5 more elements
A semiconductor device, comprising:
- an active pattern on a substrate;
- a gate structure crossing the active pattern;
- a source/drain pattern on the active pattern at a side of the gate structure;
- and
- a conductive pattern on the source/drain pattern,
- wherein the source/drain pattern includes:
- a first semiconductor pattern and a second semiconductor pattern sequentially stacked on the active pattern;
- and
- a barrier layer between the conductive pattern and at least a portion of the second semiconductor pattern, and
- wherein the barrier layer includes an oxygen atom.
7 more elements
Dependencies are inferred from the claim text.