Method for manufacturing soi wafer

A method for manufacturing an SOI wafer, comprising:

• a bonding step of bonding a bond wafer composed of a silicon wafer and a base wafer composed of a silicon wafer at room temperature with a silicon oxide film interposed therebetween, the silicon oxide film being formed on a surface of at least one of the bond wafer and the base wafer;
• and
• a thinning step of thinning the bond wafer after the bonding step to manufacture an SOI wafer, wherein
• the method further comprises, before the bonding step:
• a cleaning step of cleaning the bond wafer and the base wafer with a hydrophilic cleaning liquid;
• and
• a drying step of drying the cleaned bond wafer and base wafer by at least any one drying method of suction drying and spin drying,
• after the drying step is ended and before the bonding step is started, the bond wafer and the base wafer are stored until a state where a bonding speed at which the bonding step is to be performed is 20 mm/second or less, and
• the bonding is performed with the bonding speed of 20 mm/second or less.