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US 2019/0295852 A1Published application
Composite sacrificial gate with etch selective layer
AssigneeGlobalfoundries Inc.
InventorsQun GAO, Naved SIDDIQUI, Ankur ARYA, John R. Sporre
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Abstract
The manufacture of a FinFET device includes the formation of a composite sacrificial gate. The composite sacrificial gate includes a sacrificial gate layer such as a layer of amorphous silicon, and an etch selective layer such as a layer of silicon germanium. The etch selective layer, which underlies the sacrificial gate layer, enables the formation of a gate cut opening having a controlled critical dimension that extends through the composite sacrificial gate.
Claims17
A method of forming a structure, comprising:
- forming a composite sacrificial gate over a plurality of semiconductor fins, wherein forming the composite sacrificial gate comprises forming an etch selective layer over the fins and forming a sacrificial gate layer over the etch selective layer;
- forming a gate cut opening that extends through the composite sacrificial gate, wherein the gate cut opening is laterally spaced away from each of a pair of the fins;
- and
- forming an isolation layer within the gate cut opening.
1 more element
A method of forming a structure, comprising:
- forming an etch selective layer over a plurality of semiconductor fins and extending between the fins;
- forming a sacrificial gate layer over the etch selective layer;
- forming a gate cut opening that extends through the sacrificial gate layer and the etch selective layer, wherein the gate cut opening is laterally spaced away from the fins;
- and
- forming an isolation layer within the gate cut opening.
2 more elements
A semiconductor structure, comprising:
- a fin disposed over a semiconductor substrate;
- a functional gate disposed over the fin, wherein the functional gate comprises a gate dielectric formed over the fin and a gate conductor formed over the gate dielectric;
- and
- an isolation layer laterally spaced from the fin and contacting the functional gate, wherein the isolation layer has a first width in an upper portion thereof and a second width greater than the first width in a lower portion thereof.
1 more element
Dependencies are inferred from the claim text.