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US 2019/0295847 A1Published application
Transistor
AssigneesSemiconductor Manufacturing International (Shanghai) Corporation, Semiconductor Manufacturing International (Beijing) Corporation
InventorYong LI
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Abstract
A transistor is provided and includes a substrate; a first interlayer dielectric layer disposed on the substrate, the first interlayer dielectric layer including an opening there-through; a work function layer at least disposed over a bottom of the opening; a gate electrode layer disposed in the opening and over the work function layer; and a protection layer disposed on the work function layer and between the gate electrode layer and the first interlayer dielectric layer.
Claims14
A transistor, comprising:
- a substrate;
- a first interlayer dielectric layer disposed on the substrate, wherein the first interlayer dielectric layer includes an opening there-through;
- a work function layer at least disposed over a bottom of the opening;
- a gate electrode layer disposed in the opening and over the work function layer;
- and
- a protection layer disposed on the work function layer and between the gate electrode layer and the first interlayer dielectric layer.
3 more elements
Dependencies are inferred from the claim text.