Ion implantation apparatus and measurement device

An ion implantation apparatus comprising:

• a beamline device configured to transport an ion beam with which a wafer is irradiated;
• a first angle measuring instrument configured to measure angle information on the ion beam in a first direction perpendicular to a beam traveling direction;
• a second angle measuring instrument configured to measure angle information on the ion beam in a second direction perpendicular to the beam traveling direction and crossing the first direction;
• a relative movement mechanism configured to change relative positions of the first angle measuring instrument and the second angle measuring instrument with respect to the ion beam in a predetermined relative movement direction perpendicular to the beam traveling direction and not perpendicular to both the first direction and the second direction;
• and
• a control device configured to calculate angle information on the ion beam in a third direction perpendicular to both the beam traveling direction and the relative movement direction based on the angle information on the ion beam in the first direction measured by the first angle measuring instrument while changing the relative position of the first angle measuring instrument with respect to the ion beam and the angle information on the ion beam in the second direction measured by the second angle measuring instrument while changing the relative position of the second angle measuring instrument with respect to the ion beam.