Temperature compensation for unselected memory cells and string select switches in nand flash memory

A memory device comprising:

• a first NAND string that includes a first plurality of memory cells and a first string select switch arranged in series, the first plurality of memory cells including a selected memory cell and unselected memory cells, the first string select switch disposed between a first bit line and a first end of the first plurality of memory cells;
• a second NAND string that includes a second plurality of memory cells and a second string select switch arranged in series, the second string select switch disposed between a second bit line and a first end of the second plurality of memory cells;
• word lines coupled to memory cells in the first plurality of memory cells and memory cells in the second plurality of memory cells;
• a string select line coupled to the first and second string select switches;
• and
• a driver coupled to at least one of the word lines and the string select line, the driver providing a voltage varying in a manner complementary to absolute temperature.