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US 2019/0295637 A1Published application
Memory device
AssigneeToshiba Memory Corporation
InventorsRyu Ogiwara, Daisaburo Takashima
Life of this patent
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Abstract
According to one embodiment, a memory device includes a first circuit including a resistance change memory element capable of setting a low resistance state or a high resistance state according to a falling speed of an applied voltage, and a first rectifier element connected in series to the resistance change memory element, and a second circuit including a current source, and a second rectifier element connected in series to the current source, the second circuit having a mirror relationship with the first circuit.
Claims31
A memory device comprising:
- a first circuit comprising a resistance change memory element capable of setting a low resistance state or a high resistance state according to a falling speed of an applied voltage, and a first rectifier element connected in series to the resistance change memory element;
- and
- a second circuit comprising a current source, and a second rectifier element connected in series to the current source, the second circuit having a mirror relationship with the first circuit.
Dependencies are inferred from the claim text.