Back to results
US 2019/0295625 A1Published application
Semiconductor memory apparatus
AssigneeSK hynix Inc.
InventorsJung Hwan LEE, Dae Yong SHIM, Kang Seol LEE
Life of this patent
Estimating the term…
Abstract
A semiconductor memory apparatus includes a driving voltage providing circuit suitable for selectively providing a first driving voltage, a second driving voltage, a third driving voltage, a ground voltage, and a precharge voltage to a first driving line and a second driving line in response to an active signal, a cell characteristic information signal, and a precharge signal. The semiconductor memory apparatus also includes a sense amplifier suitable for operating by being applied with voltages provided from the first and second driving lines.
Claims8
A semiconductor memory apparatus comprising:
- a plurality of mats;
- a plurality of sense amplifiers electrically coupled with the plurality of mats, respectively;
- and
- a plurality of driving voltage providing circuits configured to provide driving voltages selectively to the plurality of sense amplifiers, respectively, in response to a plurality of cell characteristic information signals,
- wherein each of the plurality of cell characteristic information signals defines whether a data retention time of a corresponding mat of the plurality of mats is longer than a reference time.
2 more elements
Dependencies are inferred from the claim text.