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US 2019/0294374 A1Published application
Memory system including memory device and memory controller, and operating method thereof
AssigneeSK hynix Inc.
InventorHae-Rang CHOI
Life of this patent
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Abstract
A memory system includes a memory device including a plurality of memory cells, and a memory controller suitable for generating a second address based on a first address indicating a defective memory cell, among the plurality of memory cells, and sequentially transmitting the first address and a first command corresponding to the first address, and the second address and a second command corresponding to the second address to the memory device, during write and read operations of the defective memory cell.
Claims20
A memory system, comprising:
- a memory device including a plurality of memory cells;
- and
- a memory controller suitable for generating a second address based on a first address indicating a defective memory cell, among the plurality of memory cells, and sequentially transmitting the first address and a first command corresponding to the first address, and the second address and a second command corresponding to the second address to the memory device, during write and read operations of the defective memory cell.
An operating method of a memory system, comprising:
- generating a second address based on a first address indicating a defective memory cell among a plurality of memory cells in a memory device;
- sequentially transmitting the first address and a first command corresponding to the first address, and the second address and a second command corresponding to the second address to the memory device;
- and
- writing and reading data to and from the defective memory cell in response to the first address and command and the second address and command which are sequentially inputted.
1 more element
A memory system comprising:
- a memory device including a plurality of memory cells;
- and
- a memory controller suitable for:
- detecting a defective memory cell among the plurality of memory cells;
- and
- accessing the defective memory cell and another memory cell, among the plurality of memory cells, in response to a command for accessing the defective memory cell,
- wherein the defective memory cell and the another memory cell share the same bit line or the same sense amplifier, and
- wherein the defective memory cell and the another memory cell are on different word lines in the memory device.
5 more elements
Dependencies are inferred from the claim text.