Method of Manufacturing Semiconductor Device

A method of manufacturing a semiconductor device, comprising:

• (a) placing a first storage container of a plurality of storage containers where substrates are accommodated on a loading port shelf;
• (b) transferring the substrates in a predetermined order from the first storage container to one or more process chambers capable of processing the substrates;
• (c) performing a substrate processing in each of the one or more process chambers;
• (d) generating first count data corresponding to each of the one or more processing process chambers, wherein the first count data comprises at least one first count data selected from the group consisting of:
• an accumulated processing time of the processing;
• an accumulated film thickness of at least one of the substrates;
• an accumulated supply time of a process gas used for the processing;
• an accumulated supply time of a reactive gas used for the processing;
• an accumulated time of maintaining a process pressure during the processing;
• an accumulated time of maintaining a process temperature during the processing;
• and an accumulated discharge time of plasma generated during the processing;
• (e) storing the first count data;
• (f) assigning transfer flag data to, among the process chambers, one of the process chambers located next to another of the process chambers corresponding to a maximum of the first count data;
• and
• (g) transferring substrates accommodated in a second of the storage containers in the predetermined order from the second storage container to the specified one of the process chambers.