Hardmask composition and method of forming pattern using the hardmask composition

A method of forming a pattern, the method comprising:

• forming an etching layer on a substrate;
• forming a hardmask layer including graphene nanoparticles by providing a hardmask composition on the etching layer, the hardmask composition including,
• a plurality of graphene nanoparticles having a size in a range of about 5 nm to about 100 nm, and
• a solvent;
• forming a photoresist layer on the hardmask layer;
• forming a hardmask including the plurality of graphene nanoparticles by patterning the hardmask layer, the patterning including etching the plurality of graphene nanoparticles using the photoresist layer as an etching mask;
• and
• etching the etching layer using the hardmask as an etching mask.