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US 2019/0293868 A1Published application
Etchant and Etching Process for Substrate of a Semiconductor Device
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsWan-Yu Lee, Ying-Hao Kuo, Hai-Ching Chen, Tien-I Bao
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Abstract
A system and method for manufacturing semiconductor devices is provided. An embodiment comprises using an etchant to remove a portion of a substrate to form an opening with a 45° angle with a major surface of the substrate. The etchant comprises a base, a surfactant, and an oxidant. The oxidant may be hydrogen peroxide.
Claims20
A semiconductor material etchant comprising:
- water;
- a base having a concentration of between 25%-wt and about 35%-wt;
- a surfactant having a concentration of between about 0.01%-wt and about 0.4%-wt;
- and
- an oxidant having a concentration of between about 0.1%-wt and about 0.2%-wt.
2 more elements
A semiconductor material etchant comprising:
- a base for removing material from a waveguide substrate covered with a patterned hardmask, the base having a concentration of between 25%-wt and about 35%-wt;
- a surfactant for modifying an angle of etching to about 45° from a major surface of the waveguide substrate, the surfactant reactable on the waveguide substrate to form an oil by-product, the surfactant having a concentration of between about 0.01%-wt and about 0.4%-wt;
- and
- an oxidant for oxidizing the waveguide substrate beneath the oil by-product, the oxidant having a concentration of between about 0.1%-wt and about 0.2%-wt.
1 more element
A semiconductor material etchant comprising:
- water;
- a base for etching an opening in a semiconductor substrate, the base having a concentration of between 25%-wt and about 35%-wt;
- a surfactant for modifying an angle of a sidewall of the opening to about 45° from a major surface of the semiconductor substrate, the surfactant reactable on the semiconductor substrate to form an oil by-product, the surfactant having a concentration of between about 0.01%-wt and about 0.4%-wt;
- and
- an oxidant for oxidizing the semiconductor substrate beneath the oil by-product, the oxidant having a concentration of between about 0.1%-wt and about 0.2%-wt.
2 more elements
Dependencies are inferred from the claim text.