Graphene Field Effect Transistors for Detection of Ions
AssigneesUniversity of South Carolina, Clemson University
InventorsKenneth Walsh, Goutam Koley, Md. Sayful Islam, Hongmei Li
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Abstract
A graphene-based ion sensitive field effect transistor (GISFET) with high sensitivity and selectivity for ions is provided. For example, the GISFET of the present invention can exhibit high sensitivity and selectivity for K+ ions has been demonstrated utilizing a valinomycin-based ion selective membrane. The sensitivity of the GISFET can be at least about 50 millivolts/decade and can be stable for a time period of about two months, indicating the GISFET's reliability and effectiveness for physiological monitoring.
Claims21
A graphene ion selective field effect transistor comprising:
- a substrate;
- a graphene film disposed on the substrate;
- and
- an ion selective membrane disposed on the graphene film, wherein the ion selective membrane comprises an ionophore, a lipophilic salt, and a polymer having a molecular weight ranging from about 100,000 Daltons to about 200,000 Daltons.
Dependencies are inferred from the claim text.