FePt-C-BASED SPUTTERING TARGET
AssigneeTanaka Kikinzoku Kogyo K.K.
InventorsYasuyuki GOTO, Takamichi YAMAMOTO, Masahiro NISHIURA, Ryousuke KUSHIBIKI
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AssigneeTanaka Kikinzoku Kogyo K.K.
InventorsYasuyuki GOTO, Takamichi YAMAMOTO, Masahiro NISHIURA, Ryousuke KUSHIBIKI
Estimating the term…
Through the present invention, a thin film containing an FePt-based alloy and carbon, the thin film being capable of being used as a magnetic recording medium, is enabled to be formed using one target, and amount of particles is enabled to be reduced. An FePt—C-based sputtering target containing Fe, Pt, and C, wherein the FePt—C-based sputtering target has a structure in which a C phase substantially being C is dispersed in an FePt-based alloy phase containing 33 mol % or more and 60 mol % or less of Pt with the balance substantially being Fe, an average value of the size indices a of the C phase is 4.0 μm or more and 9.0 μm or less, and an average value of the nonspherical indices b of the C phase is 3.0 or more.
An FePt—C-based sputtering target containing Fe, Pt, and C, wherein
An FePt—C-based sputtering target containing Fe, Pt, and C and further containing at least one element other than Fe and Pt, wherein
An FePt—C-based sputtering target containing Fe, Pt, C, and oxide, wherein
An FePt—C-based sputtering target containing Fe, Pt, C, and oxide and further containing at least one element other than Fe and Pt, wherein
Dependencies are inferred from the claim text.