Chemical mechanical polishing system and method
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsChin-Wei Liang, Hsun-Chung Kuang, Yen-Chang Chu
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Abstract
The present disclosure relates to a chemical mechanical polishing (CMP) pad, and an associated method to perform a CMP process. In some embodiments, the CMP pad comprises a polishing layer having a front surface with protruding asperities while a back surface being planar. A film electrode is attached to the back surface of the polishing layer and is isolated from the front surface of the polishing layer. The CMP pad further comprises an insulating layer covering sidewall and bottom surfaces of the film electrode
Claims20
A chemical mechanical polishing (CMP) pad, comprising:
- a polishing layer having a front surface with protruding asperities while a back surface being planar;
- a film electrode attached to the back surface of the polishing layer and isolated from the front surface of the polishing layer;
- and
- an insulating layer covering sidewall and bottom surfaces of the film electrode.
A chemical mechanical polishing (CMP) pad, comprising:
- a polishing layer attached to a polishing platen and having a front surface configured to interact with a wafer to be processed;
- and
- a film electrode attached to a back surface of the polishing layer opposite to the front surface, and configured to affect movements of charged abrasive particles through applying an electrical field during an operation of a CMP process;
- wherein the film electrode comprises a first plurality of circular rings and a second plurality of circular rings concentric to the polishing layer and staggered arranged.
A chemical mechanical polishing (CMP) pad, comprising:
- a polishing layer attached to a polishing platen and configured to polish a facing down wafer that interacts with a front surface of the polishing layer;
- and
- a film electrode attached to a back surface of the polishing layer opposite to the front surface and configured to apply an electrical field to attract charged abrasive particles towards the polishing layer during a CMP operation;
- wherein the film electrode comprises an upper conductive layer close to the polishing layer and a lower conductive layer away from the polishing layer, wherein an insulation layer separates the upper conductive layer from the lower conductive layer.
Dependencies are inferred from the claim text.