Doped bismuth silicate crystals via devitrification of glass forming liquids
AssigneeGlass Coatings & Concepts, LLC
InventorsYuxuan Gong, Mariano H. Velez
Life of this patent
Estimating the term…
Abstract
This technology is directed to the preparation of doped-bismuth-silicate seed crystals through controlled crystallization (e.g. dimensionality of growth and nucleation mechanism) and the method of forming high purity single seed (particle size ranges from micrometers to millimeters) for various uses. These seed crystals have a nominal stoichiometry of Bi2-xAxSiO5, Bi2-xAxSi3O9, Bi4-xAxSi3O9, and Bi12-xAxSiO20, where A is a rare earth dopant selected from La, Ce, Nd, Pr, and/or Sm.
Claims22
1) A method of forming a doped bismuth-silicate seed crystal with a controlled crystallization process to form a high purity, bismuth-silicate seed crystal comprising from about 10 mole % to about 50 mole % bismuth trioxide, from about 20 mole % to about 60 mole % silicon dioxide, and less than 10 mole % of a rare earth dopant A, which is combined and melted from about 2000-2500° F. for about 1-2 hours to form a glass melt having a nominal stoichiometry of Bi2-xAxSiO5, Bi2-xAxSi3O9, Bi4-xAxSi3O9, and Bi12-xAxSiO20, where x=0.001 to 0.1.
12) A doped bismuth-silicate seed crystal comprising from about 10 mole % to about 50 mole % bismuth trioxide, from about 20 mole % to about 60 mole % silicon dioxide, and less than 10 mole % of a rare earth dopant A, having a nominal stoichiometry of Bi2-xAxSiO5, Bi2-xAxSi3O9, Bi4-xAxSi3O9, and Bi12-xAxSiO20, where x=0.001 to 0.1.
Dependencies are inferred from the claim text.