Method for neutral beam processing based on gas cluster ion beam technology and articles produced thereby
AssigneeExogenesis Corporation
InventorsSean R. Kirkpatrick, Allen R. Kirkpatrick, Michael J. Walsh, Richard C. Svrluga
Life of this patent
Estimating the term…
Abstract
A method for treating a silicon substrate, and a silicon substrate, provide a surface treated with an accelerated neutral beam.
Claims4
1-17. (canceled)
A silicon substrate, comprising a surface layer of SiCx (0.05<X<3) formed by accelerated and focused Neutral Beam irradiation of a silicon substrate, wherein the Neutral Beam is derived from a gas cluster ion beam comprising carbon atoms, which gas cluster ion beam has had its cluster ions dissociated and charged particles removed, and further wherein a Neutral Beam irradiated surface of the silicon substrate comprises an improved smoothness over comparable gas cluster ion beam irradiation.
A silicon substrate, comprising a surface layer of SiCx (0.05<X<3) formed by the process of claim 1, wherein the surface layer comprises an improved smoothness over comparable gas cluster ion beam irradiation.
Dependencies are inferred from the claim text.