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US 2019/0273078 A1Published application
Monolithically integrated low loss passive components and associated circuitry and methods for the manufacture thereof
AssigneeBAE Systems Information and Electronic Systems Integration Inc.
InventorRenyuan Wang
Life of this patent
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Abstract
An oscillator having a dielectric wave guiding resonant cavity and an oscillator circuit operatively coupled to the dielectric wave guiding resonant cavity having at least one transistor, the two being of a unitary construction.
Claims20
An oscillator, the oscillator comprising:
- a dielectric wave guiding resonant cavity;
- and
- an oscillator circuit operatively coupled to said dielectric wave guiding resonant cavity comprising at least one transistor,
- wherein said oscillator circuit is monolithically integrated with said dielectric wave guiding resonant cavity.
1 more element
A method of integrating low loss passive components with high electron mobility transistors, the method comprising:
- obtaining first material, wherein said first material is a low dielectric loss material that is suitable for etching;
- growing a second material on a top surface of said first material, wherein said second material is suitable for etching, said first and second materials forming a monolithically integrated assembly having an upper portion made of said first material and a lower portion of said second material;
- fabricating at least one transistor on said first material;
- mounting a handle to said first material using an intermediate layer;
- applying hardmask and photoresist layers to said second material from a backside thereof;
- stripping said photoresist;
- performing a deep etch of said second material;
- stripping said hardmask;
- and
- removing said wafer handle and intermediate layers.
7 more elements
A method of integrating low loss passive components with high electron mobility transistors, the method comprising:
- obtaining a first material, wherein said first material is a low dielectric loss material that is suitable for etching;
- growing a second material on a top surface of said first material, wherein said second material is suitable for etching, said first and second materials forming a monolithically integrated assembly having an upper portion made of said first material and a lower portion of said second material;
- forming at least one high electron mobility transistor in said second material;
- and
- forming at least one passive component in said first material.
2 more elements
Dependencies are inferred from the claim text.