# US 2019/0245507 A1 · Broadband power amplifier and matching network for multi-band millimeter-wave 5g communication > Agents: this data is available as JSON from the patentgrep API and MCP server — see https://patentgrep.com/llms.txt - Number: US 2019/0245507 A1 - Document ID: US20190245507A1 - Status: Published application - Kind: A1 - Application number: 15/891,328 - Filed: 2018-02-07 - Published: 2019-08-08 - Earliest claimed: 2018-02-07 - Assignees: Speedlink Technology Inc. - Applicants: Speedlink Technology Inc. - Inventors: Taiyun Chi; Hua Wang; Thomas Chen - Web page: https://patentgrep.com/patent/US20190245507A1 ## CPC - H03H 7/38: Impedance-matching networks - H01F 19/04: Transformers or mutual inductances suitable for handling frequencies considerably beyond the audio range (resonant circuits H03H) - H01F 27/2804: {Printed windings} - H03F 3/195: in integrated circuits - H03F 3/245: {with semiconductor devices only} - H03F 3/45179: {using MOSFET transistors as the active amplifying circuit (H03F3/45278 takes precedence)} - H03H 7/1766: {Parallel LC in series path (H03H7/1783 takes precedence)} - H01F 27/2809: {on stacked layers} - H01F 27/2819: {Planar transformers with printed windings, e.g. surrounded by two cores and to be mounted on printed circuit} - H03F 2200/411: the output amplifying stage of an amplifier comprising two power stages - H03F 2203/45731: the LC comprising a transformer - H03H 7/0161: {Bandpass filters (H03H7/12 takes precedence)} - H03H 7/09: Filters comprising mutual inductance - H03H 2001/0078: {comprising spiral inductor on a substrate} - H03H 2007/386: {Multiple band impedance matching} - H03H: IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS (waveguides, resonators, lines or other devices of the waveguide type H01P) - H01F: MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES - H03F: AMPLIFIERS ## Abstract According to one embodiment, a matching network circuit includes a first capacitor coupled, in parallel, to an input port of the matching network circuit; a broadband on-chip transformer coupled, in parallel, to the first capacitor, where the broadband on-chip transformer includes a primary winding and a secondary winding, where the secondary winding is a partial winding. The matching network circuit includes a second capacitor coupled, in series, in between the broadband on-chip transformer and an output port of the matching network circuit. ## Claims ### Claim 1 A matching network circuit, the circuit comprising: a first capacitor coupled, in parallel, to an input port of the matching network circuit; a broadband on-chip transformer coupled, in parallel, to the first capacitor, wherein the broadband on-chip transformer includes a primary winding and a secondary winding, wherein the secondary winding is a partial winding; and a second capacitor coupled, in series, in between the broadband on-chip transformer and an output port of the matching network circuit. ### Claim 2 (depends on 1) The matching network circuit of claim 1, wherein the primary and the secondary windings of the broadband on-chip transformer comprises planar octagonal windings. ### Claim 3 (depends on 2) The matching network circuit of claim 2, wherein the planar octagonal winding of the primary winding are electromagnetically coupled to the planar octagonal winding of the secondary windings along a planar axis. ### Claim 4 (depends on 2) The matching network circuit of claim 2, wherein the primary and the secondary windings are separated by a layer of dielectric. ### Claim 5 (depends on 1) The matching network circuit of claim 1, wherein the partial winding of the secondary winding includes a 1.5 turns winding. ### Claim 6 (depends on 1) The matching network circuit of claim 1, wherein the primary winding is coupled to a supply source to supply a bias voltage to a circuit of the input port. ### Claim 7 (depends on 1) The matching network circuit of claim 1, wherein the secondary winding includes at least two conductive layers. ### Claim 8 A two-stage power amplifier (PA), the PA comprising: a first amplifier stage; a second amplifier stage; a first matching network circuit coupled in between the first amplifier stage and the second amplifier stage; and a second matching network circuit coupled to an output port of the second amplifier stage, wherein the second matching network circuit comprises: a first capacitor coupled, in parallel, to an input port of the second matching network circuit; a broadband on-chip transformer coupled, in parallel, to the first capacitor, wherein the broadband on-chip transformer includes a primary winding and a secondary winding, wherein the secondary winding is a partial winding; and a second capacitor coupled, in series, in between the broadband on-chip transformer and an output port of the second matching network circuit. ### Claim 9 (depends on 8) The PA of claim 8, wherein the primary and the secondary windings of the broadband on-chip transformer comprises planar octagonal windings. ### Claim 10 (depends on 9) The PA of claim 9, wherein the planar octagonal winding of the primary winding are electromagnetically coupled to the planar octagonal winding of the secondary windings along a planar axis. ### Claim 11 (depends on 9) The PA of claim 9, wherein the primary and the secondary windings are separated by a layer of dielectric. ### Claim 12 (depends on 8) The PA of claim 8, wherein the partial winding of the secondary winding includes a 1.5 turns winding. ### Claim 13 (depends on 8) The PA of claim 8, wherein the primary winding is coupled to a supply source to supply a bias voltage to a circuit of the input port. ### Claim 14 (depends on 8) The PA of claim 8, wherein the secondary winding includes at least two conductive layers. ### Claim 15 A radio frequency (RF) frontend circuit comprising a power amplifier to amplifier a transmitted signal, the power amplifier comprising: a first amplifier stage; a second amplifier stage; a first matching network circuit coupled in between the first amplifier stage and the second amplifier stage; and a second matching network circuit coupled to an output port of the second amplifier stage, wherein the second matching network circuit comprises: a first capacitor coupled, in parallel, to an input port of the second matching network circuit; a broadband on-chip transformer coupled, in parallel, to the first capacitor, wherein the broadband on-chip transformer includes a primary winding and a secondary winding, wherein the secondary winding is a partial winding; and a second capacitor coupled, in series, in between the broadband on-chip transformer and an output port of the second matching network circuit. ### Claim 16 (depends on 15) The RF front end circuit of claim 15, wherein the primary and the secondary windings of the broadband on-chip transformer comprises planar octagonal windings. ### Claim 17 (depends on 16) The RF front end circuit of claim 16, wherein the planar octagonal winding of the primary winding are electromagnetically coupled to the planar octagonal winding of the secondary windings along a planar axis. ### Claim 18 (depends on 16) The RF front end circuit of claim 16, wherein the primary and the secondary windings are separated by a layer of dielectric. ### Claim 19 (depends on 15) The RF front end circuit of claim 15, wherein the partial winding of the secondary winding includes a 1.5 turns winding. ### Claim 20 (depends on 15) The RF front end circuit of claim 15, wherein the primary winding is coupled to a supply source to supply a bias voltage to a circuit of the input port. ### Claim 21 (depends on 15) The RF front end circuit of claim 15, wherein the secondary winding includes at least two conductive layers.