# US 2019/0245121 A1 · Light-emitting diode package

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- Number: US 2019/0245121 A1
- Document ID: US20190245121A1
- Status: Published application
- Kind: A1
- Application number: 16/209,992
- Filed: 2018-12-05
- Published: 2019-08-08
- Earliest claimed: 2018-02-08
- Assignees: Lextar Electronics Corporation
- Applicants: Lextar Electronics Corporation
- Inventors: Shang-Hsun TSAI; Li-Wei LIU
- Web page: https://patentgrep.com/patent/US20190245121A1

## CPC

- H10H 20/8514: {characterised by their shape, e.g. plate or foil}
- H10H 20/856: Reflecting means
- H10H 20/857: Interconnections, e.g. lead-frames, bond wires or solder balls
- H10W 90/00: Package configurations
- H10H 20/0361: {of wavelength conversion means}
- H10H 20/854: characterised by their material, e.g. epoxy or silicone resins
- H10H: INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10W: GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10

## Abstract

A light-emitting diode package includes a substrate, at least one light-emitting chip, a light-reflective layer and a wave-length conversion fluorescent layer. The light-emitting chip is located on the substrate. The light-reflective layer is arranged around the light-emitting chip. The wave-length conversion fluorescent layer is located over the light-emitting chip, wherein the light-reflective layer is spaced from the fluorescent wave-length conversion layer by a groove that reaches two opposite sides of the light-emitting diode package.

## Claims

### Claim 1

A light-emitting diode package comprising:
a substrate;
at least one light-emitting chip disposed on the substrate;
a light-reflective layer disposed around the light-emitting chip; and
a wave-length conversion fluorescent layer disposed over the light-emitting chip, wherein the light-reflective layer is spaced from the fluorescent wave-length conversion layer by at least one groove that reaches two opposite sides of the light-emitting diode package.

### Claim 2 (depends on 1)

The light-emitting diode package of claim 1, wherein a thermal expansion coefficient of the light-reflective layer is different from that of the wave-length conversion fluorescent layer.

### Claim 3 (depends on 1)

The light-emitting diode package of claim 1, wherein the groove has a width ranging from 0.05 millimeter to 0.5 millimeter.

### Claim 4 (depends on 1)

The light-emitting diode package of claim 1, wherein the at least one groove comprises plural grooves formed between each edge of the wave-length conversion fluorescent layer and the light-reflective layer respectively.

### Claim 5 (depends on 4)

The light-emitting diode package of claim 4, wherein any immediately-adjacent two of the plural grooves are intersected at a corner of the wave-length conversion fluorescent layer.

### Claim 6 (depends on 4)

The light-emitting diode package of claim 4, wherein any opposite two of the plural grooves are in parallel with each other.

### Claim 7 (depends on 1)

The light-emitting diode package of claim 1, wherein the at least one light-emitting chip is electrically coupled to the substrate by a flip-chip manner.

### Claim 8 (depends on 1)

The light-emitting diode package of claim 1, wherein the at least one light-emitting chip is electrically coupled to the substrate by an electrical wire.

### Claim 9 (depends on 8)

The light-emitting diode package of claim 8, wherein at least part of the electrical wire is embedded in the light-reflective layer.

### Claim 10 (depends on 1)

The light-emitting diode package of claim 1, wherein a top surface of the wave-length conversion fluorescent layer is level with a top surface of the light-reflective layer.