# US 2019/0245100 A1 · Method and optoelectronic structure providing polysilicon photonic devices with different optical properties in different regions

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- Number: US 2019/0245100 A1
- Document ID: US20190245100A1
- Status: Published application
- Kind: A1
- Application number: 16/384,037
- Filed: 2019-04-15
- Published: 2019-08-08
- Earliest claimed: 2014-08-25
- Assignees: Micron Technology, Inc.; Massachusetts Institute of Technology
- Applicants: Micron Technology, Inc.; Massachusetts Institute of Technology
- Inventors: Roy Meade; Karan Mehta; Efraim Megged; Jason Orcutt; Milos Popovic; Rajeev Ram; Jeffrey Shainline; Zvi Sternberg; Vladimir Stojanovic; Ofer Tehar-Zahav
- Web page: https://patentgrep.com/patent/US20190245100A1

## CPC

- H10F 77/413: {directly associated or integrated with the devices, e.g. back reflectors (directly associated or integrated with photovoltaic cells H10F77/42)}
- H10F 39/103: {the at least one element covered by H10F30/00 having potential barriers, e.g. integrated devices comprising photodiodes or phototransistors}
- H10F 71/121: {The active layers comprising only Group IV materials}
- H10F 71/1221: {comprising polycrystalline silicon}
- H10F 77/1642: {including only Group IV materials}
- Y02E 10/546: Polycrystalline silicon PV cells
- Y02P 70/50: Manufacturing or production processes characterised by the final manufactured product
- H10F: INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- Y02E: REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02P: CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS

## Abstract

Method and structural embodiments are described which provide an integrated structure using polysilicon material having different optical properties in different regions of the structure.

## Claims

### Claim at position 1

1-21. (canceled)

### Claim 22

An integrated structure comprising:
a substrate;
an optical isolation region formed in the substrate;
a first photonic device over the substrate, the first photonic device formed of a first polysilicon material; and
a second photonic device over and vertically aligned with the optical isolation region, the second photonic device formed of a second polysilicon material different from the first polysilicon material, wherein the first polysilicon material and second polysilicon material are coplanar in the integrated structure and have different optical properties.

### Claim 23 (depends on 22)

The integrated structure of claim 22, further comprising an electronic circuit comprising at least one transistor, wherein a gate of the at least one transistor is formed of the first polysilicon material.

### Claim 24 (depends on 22)

The integrated structure of claim 22, wherein the first and second polysilicon materials have different optical transmission properties.

### Claim 25 (depends on 22)

The integrated structure of claim 22, wherein the first and second polysilicon materials reside on a common physical layer of the integrated structure.

### Claim 26 (depends on 22)

The integrated structure of claim 22, wherein the first photonic device comprises a defect state photodetector.

### Claim 27 (depends on 22)

The integrated structure of claim 22, wherein the second polysilicon material comprises an amorphized and recrystallized polysilicon material.

### Claim 28 (depends on 22)

The integrated structure of claim 22, further comprising forming a nitride material over the second photonic device, but not over the first photonic device.

### Claim 29 (depends on 22)

The integrated structure of claim 22, wherein the second photonic device comprises a waveguide core.

### Claim 30

An integrated structure comprising:
a substrate
an optical isolation region formed in the substrate;
a first photonic device over the substrate, the first photonic device comprising a first polysilicon material; and
a second photonic device over and vertically aligned with the optical isolation region, the second photonic device formed of a second polysilicon material different from the first polysilicon material, wherein the second polysilicon material is formed by implanting a region of the first polysilicon material with silicon to create an amorphous silicon region and annealing the annealing the amorphous silicon region to create the second polysilicon material,
wherein the second polysilicon material is coplanar with the first polysilicon material and has different optical properties from the first polysilicon material.

### Claim 31 (depends on 30)

The integrated structure of claim 30, further comprising an electronic circuit comprising at least one transistor, wherein a gate of the at least one transistor is formed of the first polysilicon material.

### Claim 32 (depends on 30)

The integrated structure of claim 30, wherein the first and second polysilicon materials have different optical transmission properties.

### Claim 33 (depends on 30)

The integrated structure of claim 30, wherein the first and second polysilicon materials reside on a common physical layer of the integrated structure.

### Claim 34 (depends on 30)

The integrated structure of claim 30, wherein the first photonic device comprises a defect state photodetector.

### Claim 35 (depends on 30)

The integrated structure of claim 30, wherein the second polysilicon material comprises an amorphized and recrystallized polysilicon material.

### Claim 36 (depends on 30)

The integrated structure of claim 30, further comprising forming a nitride material over the second photonic device, but not over the first photonic device.

### Claim 37 (depends on 30)

The integrated structure of claim 30, wherein the second photonic device comprises a waveguide core.