# US 2019/0244785 A1 · Ion implantation apparatus and measurement device > Agents: this data is available as JSON from the patentgrep API and MCP server — see https://patentgrep.com/llms.txt - Number: US 2019/0244785 A1 - Document ID: US20190244785A1 - Status: Published application - Kind: A1 - Application number: 16/270,236 - Filed: 2019-02-07 - Published: 2019-08-08 - Earliest claimed: 2018-02-08 - Assignees: Sumitomo Heavy Industries Ion Technology Co., Ltd. - Applicants: Sumitomo Heavy Industries Ion Technology Co., Ltd. - Inventors: Noriyasu Ido; Hiroyuki Kariya; Masahide Ooura - Web page: https://patentgrep.com/patent/US20190244785A1 ## CPC - H01J 37/3171: {for ion implantation} - H01J 37/023: {Means for mechanically adjusting components not otherwise provided for} - H01J 37/1474: {Scanning means} - H01J 37/244: Detectors; Associated components or circuits therefor - H01J 37/304: Controlling tubes by information coming from the objects {or from the beam}, e.g. correction signals - H01J 2237/24405: Faraday cages - H01J 2237/24528: Direction of beam or parts thereof in view of the optical axis, e.g. beam angle, angular distribution, beam divergence, beam convergence or beam landing angle on sample or workpiece - H01J 2237/24535: Beam current - H01J 2237/31701: Ion implantation - H01J: ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS (spark-gaps H01T; electric arc lamps H05B31/00; particle accelerators H05H) ## Abstract A measurement device includes a plurality of slits, a beam current measurement unit provided at a position away from the slits in a beam traveling direction, and a measurement control unit. The beam current measurement unit is configured to be capable of measuring a beam current at a plurality of measurement positions to be different positions in a first direction perpendicular to the beam traveling direction. The slits are disposed to be spaced apart in the first direction such that the first direction coincides with a slit width direction and are configured to be movable in the first direction. The measurement control unit acquires a plurality of beam current values measured at the plurality of measurement positions to be the different positions in the first direction with the beam current measurement unit while moving the slits in the first direction. ## Claims ### Claim 1 An ion implantation apparatus comprising: a beamline device configured to transport an ion beam with which a wafer is irradiated; and a measurement device configured to measure angle information on the ion beam, wherein the measurement device includes a plurality of slits through which a part of the ion beam passes, a beam current measurement unit provided at a position away from the plurality of slits in a beam traveling direction, and a measurement control unit, wherein the beam current measurement unit is configured to be capable of measuring a beam current at a plurality of measurement positions to be different positions in a first direction perpendicular to the beam traveling direction, wherein the plurality of slits are disposed to be spaced apart in the first direction such that the first direction coincides with a slit width direction and are configured to be movable in the first direction, and wherein the measurement control unit acquires a plurality of beam current values measured at the plurality of measurement positions to be the different positions in the first direction with the beam current measurement unit while moving the plurality of slits in the first direction. ### Claim 2 (depends on 1) The ion implantation apparatus according to claim 1, wherein the measurement control unit calculates angular distribution in the first direction of the entire of the ion beam based on positions of the plurality of slits in the first direction and the plurality of beam current values measured at the plurality of measurement positions to be the different positions in the first direction. ### Claim 3 (depends on 1) The ion implantation apparatus according to claim 1, wherein the measurement control unit calculates phase space distribution in the first direction of the ion beam based on positions of the plurality of slits in the first direction and the plurality of beam current values measured at the plurality of measurement positions to be the different positions in the first direction. ### Claim 4 (depends on 1) The ion implantation apparatus according to claim 1, wherein the measurement control unit acquires the plurality of beam current values measured at the plurality of measurement positions to be the different positions in the first direction while moving the plurality of slits by the same distance as a slit width in the first direction. ### Claim 5 (depends on 1) The ion implantation apparatus according to claim 1, wherein the measurement control unit acquires the plurality of beam current values measured at the plurality of measurement positions to be the different positions in the first direction while moving the plurality of slits at a constant speed in the first direction. ### Claim 6 (depends on 1) The ion implantation apparatus according to claim 1, wherein the measurement control unit moves the plurality of slits over the same distance as an interval between a pair of adjacent slits of the plurality of slits in the first direction. ### Claim 7 (depends on 1) The ion implantation apparatus according to claim 1, wherein an interval between a pair of adjacent slits of the plurality of slits in the first direction is an integer multiple of the slit width. ### Claim 8 (depends on 1) The ion implantation apparatus according to claim 1, wherein the plurality of slits include a first slit and a second slit provided adjacent to the first slit in the first direction, and wherein an interval between the first slit and the second slit is set such that a second part of the ion beam passing through the second slit does not enter one or more measurement positions where a first part of the ion beam passing through the first slit can be measured. ### Claim 9 (depends on 1) The ion implantation apparatus according to claim 1, wherein the measurement device includes one beam shielding body including the plurality of slits. ### Claim 10 (depends on 1) The ion implantation apparatus according to claim 1, wherein the plurality of slits include a first end portion slit and a second end portion slit respectively disposed at both ends in the first direction, and wherein the beam current measurement unit is configured to be capable of measuring the beam current at the plurality of measurement positions to be the different positions in the first direction over a section longer than a distance from the first end portion slit to the second end portion slit in the first direction. ### Claim 11 (depends on 10) The ion implantation apparatus according to claim 10, wherein the beam current measurement unit is configured to be capable of measuring the beam current at the plurality of measurement positions to be the different positions in the first direction over a section longer than the total of the distance from the first end portion slit to the second end portion slit in the first direction and a moving distance of the plurality of slits in the first direction. ### Claim 12 (depends on 1) The ion implantation apparatus according to claim 1, wherein the measurement control unit outputs an alert in a case where the current value measured at at least one of a first end portion measurement position and a second end portion measurement position respectively positioned at both ends in the first direction among the plurality of measurement positions of the beam current measurement unit is equal to or greater than a predetermined threshold. ### Claim 13 (depends on 1) The ion implantation apparatus according to claim 1, wherein a first mode in which the plurality of beam current values measured at the plurality of measurement positions to be the different positions in the first direction are acquired while the plurality of slits are moved over a first distance in the first direction and a second mode in which the plurality of beam current values measured at the plurality of measurement positions to be the different positions in the first direction are acquired while the plurality of slits are fixed or moved over a second distance smaller than the first distance in the first direction are provided. ### Claim 14 (depends on 13) The ion implantation apparatus according to claim 13, wherein the measurement device compares angle information on the ion beam measured in the second mode with angle information on the ion beam measured in the first mode as a preliminary and then has the wafer be irradiated with the ion beam in a case where the result of the comparison satisfies a predetermined condition. ### Claim 15 (depends on 13) The ion implantation apparatus according to claim 13, wherein the measurement device compares angle information on the ion beam measured in the second mode with angle information on the ion beam measured in the first mode as a preliminary and then outputs an alert in a case where the result of the comparison does not satisfy a predetermined condition. ### Claim 16 (depends on 13) The ion implantation apparatus according to claim 13, wherein the measurement device compares angle information on the ion beam measured in the second mode with angle information on the ion beam measured in the first mode as a preliminary, and then in a case where the result of the comparison does not satisfy a predetermined condition, re-measures the angle information on the ion beam in the first mode and adjusts an operation parameter of the beamline device based on the result of the re-measurement in the first mode. ### Claim 17 (depends on 1) The ion implantation apparatus according to claim 1, wherein the beamline device includes a scanner which conducts reciprocating scanning with the ion beam in a second direction perpendicular to the beam traveling direction and the first direction, and wherein the measurement device measures angle information in the first direction on the ion beam going through the reciprocating scanning in the second direction. ### Claim 18 (depends on 1) The ion implantation apparatus according to claim 1, wherein the beam current measurement unit has a plurality of electrodes respectively provided at the plurality of measurement positions to be the different positions in the first direction. ### Claim 19 (depends on 1) The ion implantation apparatus according to claim 1, wherein the beam current measurement unit has one or more electrodes and a moving mechanism which moves the one or more electrodes to the plurality of measurement positions to be the different positions in the first direction. ### Claim 20 (depends on 1) The ion implantation apparatus according to claim 1, wherein the measurement device further includes a plurality of beam current detection units respectively provided adjacent to the plurality of slits. ### Claim 21 (depends on 20) The ion implantation apparatus according to claim 20, wherein the measurement control unit compares beam current values detected by the plurality of beam current detection units with the plurality of beam current values measured at the plurality of measurement positions to be the different positions in the first direction with the beam current measurement unit and then outputs an alert in a case where the result of the comparison does not satisfy a predetermined condition. ### Claim 22 (depends on 20) The ion implantation apparatus according to claim 20, wherein the measurement control unit calculates the phase space distribution in the first direction of the ion beam based on beam current values detected by the plurality of beam current detection units, the positions of the plurality of slits in the first direction, and the plurality of beam current values measured at the plurality of measurement positions to be the different positions in the first direction. ### Claim 23 A measurement device measuring angle information on an ion beam, comprising: a plurality of slits through which a part of the ion beam passes; a beam current measurement unit that is provided at a position away from the plurality of slits in a beam traveling direction; and a measurement control unit, wherein the beam current measurement unit is configured to be capable of measuring a beam current at a plurality of measurement positions to be different positions in a first direction perpendicular to the beam traveling direction, wherein the plurality of slits are disposed to be spaced apart in the first direction such that the first direction coincides with a slit width direction and are configured to be movable in the first direction, and wherein the measurement control unit acquires a plurality of beam current values measured at the plurality of measurement positions to be the different positions in the first direction with the beam current measurement unit while moving the plurality of slits in the first direction.