# US 2019/0244784 A1 · Method of processing a surface by means of a particle beam

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- Number: US 2019/0244784 A1
- Document ID: US20190244784A1
- Status: Published application
- Kind: A1
- Application number: 16/340,363
- Filed: 2017-10-12
- Published: 2019-08-08
- Earliest claimed: 2016-10-12
- Assignees: Scia Systems GmbH
- Applicants: Scia Systems GmbH
- Inventors: Thoralf Dunger; Marcel Demmler; Michael Zeuner; Matthias Nestler
- Web page: https://patentgrep.com/patent/US20190244784A1

## CPC

- H01J 37/3045: {Object or beam position registration}
- H01J 37/304: Controlling tubes by information coming from the objects {or from the beam}, e.g. correction signals
- H01J 37/3056: {for microworking, e. g. etching of gratings or trimming of electrical components}
- H01J 2237/30: Electron or ion beam tubes for processing objects
- H01J 2237/30466: Detecting endpoint of process
- H01J 2237/3151: Etching
- H01J 2237/317: Processing objects on a microscale
- H01J 2237/31713: Focused ion beam
- H01J 2237/31749: Focused ion beam
- H01J: ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS (spark-gaps H01T; electric arc lamps H05B31/00; particle accelerators H05H)

## Abstract

A method for processing a surface, having an initial topology, using a particle beam can include processing of the surface using the particle beam at a first angle of the particle beam with respect to the surface in accordance with a target topology of the surface. The method can furthermore include subsequent processing of the surface using the particle beam at a second angle of the particle beam with respect to the surface in accordance with the target topology of the surface, wherein the second angle differs from the first angle.

## Claims

### Claim 1

A method for processing a surface, having an initial topology, using a particle beam, the method comprising:
processing the surface using the particle beam at a first angle of the particle beam with respect to the surface in accordance with a target topology of the surface; and
subsequently processing the surface using the particle beam at a second angle of the particle beam with respect to the surface in accordance with the target topology of the surface, wherein the second angle differs from the first angle,
wherein the particle current density and/or the particle current flow of the particle beam during the processing operations of the surface are substantially the same, and/or wherein only the angle of the particle beam with respect to the surface is changed, wherein further parameters of the particle beam, of the particle beam characteristic and/or of the particle beam generation are kept substantially constant or only exhibit deviations below a tolerance value.

### Claim 2

A method for processing a surface, having an initial topology, using a particle beam, the method comprising:
processing the surface using the particle beam, wherein the particle beam is incident on the surface at a first angle with respect to the surface in accordance with a target topology of the surface;
simulating the processing of the topology of the surface at a second angle after processing the topology of the surface at the first angle; and
subsequently processing starting from the simulated topology of the surface using the particle beam, wherein the particle beam is incident on the surface at a second angle with respect to the surface in accordance with a target topology of the surface, wherein the second angle differs from the first angle,
wherein the particle current density and/or the particle current flow of the particle beam during the processing operations of the surface are substantially the same, and/or wherein only the angle of the particle beam with respect to the surface is changed, wherein further parameters of the particle beam, of the particle beam characteristic and/or of the particle beam generation are kept substantially constant or only exhibit deviations below a tolerance value.

### Claim 3 (depends on 2)

The method according to claim 2,
wherein simulating the topology of the surface is performed before and/or during the processing operation at the first angle.

### Claim 4 (depends on 1)

The method according to claim 1, further comprising:
simulating successively performed processing operations on the surface with the particle beam at respectively different angles of the particle beam with respect to the surface, wherein at least one simulation is used to ascertain at least the respectively different angles for the successively performed processing.

### Claim 5 (depends on 1)

The method according to claim 1,
wherein the first angle and/or the second angle of the particle beam with respect to the surface is/are infinitely settable.

### Claim 6 (depends on 1)

The method according to claim 1,
wherein the first angle and/or the second angle of the particle beam with respect to the surface is/are set by way of positioning the particle beam and/or by way of positioning the surface.

### Claim 7 (depends on 1)

The method according to claim 1,
wherein an instantaneous topology of the surface is measured only before and/or after the two processing operations of the surface.

### Claim 8 (depends on 1)

The method according to claim 1,
wherein the surface is processed in a chamber having a pressure which is lower than the air pressure, and the chamber is vented and/or opened only before and after both processing operations of the surface.

### Claim 9 (depends on 1)

The method according to claim 1, further comprising:
regulating and/or controlling the temperature of the surface in dependence on the angle of the particle beam with respect to the surface.

### Claim 10 (depends on 2)

The method according to claim 2, further comprising:
simulating successively performed processing operations on the surface with the particle beam at respectively different angles of the particle beam with respect to the surface, wherein at least one simulation is used to ascertain at least the respectively different angles for the successively performed processing.

### Claim 11 (depends on 2)

The method according to claim 2,
wherein the first angle and/or the second angle of the particle beam with respect to the surface is/are infinitely settable.

### Claim 12 (depends on 2)

The method according to claim 2,
wherein the first angle and/or the second angle of the particle beam with respect to the surface is/are set by way of positioning the particle beam and/or by way of positioning the surface.

### Claim 13 (depends on 2)

The method according to claim 2,
wherein an instantaneous topology of the surface is measured only before and/or after the two processing operations of the surface.

### Claim 14 (depends on 2)

The method according to claim 2,
wherein the surface is processed in a chamber having a pressure which is lower than the air pressure, and the chamber is vented and/or opened only before and after both processing operations of the surface.

### Claim 15 (depends on 2)

The method according to claim 2, further comprising:
regulating and/or controlling the temperature of the surface in dependence on the angle of the particle beam with respect to the surface.

### Claim 16 (depends on 3)

The method according to claim 3, further comprising:
simulating successively performed processing operations on the surface with the particle beam at respectively different angles of the particle beam with respect to the surface, wherein at least one simulation is used to ascertain at least the respectively different angles for the successively performed processing.

### Claim 17 (depends on 3)

The method according to claim 3,
wherein the first angle and/or the second angle of the particle beam with respect to the surface is/are infinitely settable.

### Claim 18 (depends on 3)

The method according to claim 3,
wherein the first angle and/or the second angle of the particle beam with respect to the surface is/are set by way of positioning the particle beam and/or by way of positioning the surface.

### Claim 19 (depends on 3)

The method according to claim 3,
wherein an instantaneous topology of the surface is measured only before and/or after the two processing operations of the surface.

### Claim 20 (depends on 3)

The method according to claim 3,
wherein the surface is processed in a chamber having a pressure which is lower than the air pressure, and the chamber is vented and/or opened only before and after both processing operations of the surface.

### Claim 21 (depends on 3)

The method according to claim 3, further comprising:
regulating and/or controlling the temperature of the surface in dependence on the angle of the particle beam with respect to the surface.
