# US 2019/0244756 A1 · Boron nitride and method of producing boron nitride

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- Number: US 2019/0244756 A1
- Document ID: US20190244756A1
- Status: Published application
- Kind: A1
- Application number: 16/270,493
- Filed: 2019-02-07
- Published: 2019-08-08
- Earliest claimed: 2013-11-27
- Assignees: Board of Trustees of Northern Illinois University
- Inventors: Narayan S. Hosmane; Amartya Chakrabarti; Shena M. Stanley
- Web page: https://patentgrep.com/patent/US20190244756A1

## CPC

- H01G 4/08: Inorganic dielectrics
- B82Y 30/00: Nanotechnology for materials or surface science, e.g. nanocomposites
- C01B 21/0646: {Preparation by pyrolysis of boron and nitrogen containing compounds}
- C30B 7/10: by application of pressure, e.g. hydrothermal processes
- C30B 7/105: {using ammonia as solvent, i.e. ammonothermal processes}
- C30B 29/403: {AIII-nitrides}
- C30B 29/60: characterised by shape
- C30B 29/64: Flat crystals, e.g. plates, strips or discs
- B82Y 40/00: Manufacture or treatment of nanostructures
- C01P 2002/72: by d-values or two theta-values, e.g. as X-ray diagram
- C01P 2002/82: by IR- or Raman-data
- C01P 2004/03: obtained by SEM
- C01P 2004/04: obtained by TEM, STEM, STM or AFM
- C01P 2004/24: Nanoplates, i.e. plate-like particles with a thickness from 1-100 nanometer
- C01P 2006/40: Electric properties
- C01P 2006/80: Compositional purity
- Y10S 977/734: Fullerenes, i.e. graphene-based structures, such as nanohorns, nanococoons, nanoscrolls or fullerene-like structures, e.g. WS2 or MoS2 chalcogenide nanotubes, planar C3N4, etc.
- Y10S 977/842: for carbon nanotubes or fullerenes
- H01G: CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE (selection of specified materials as dielectric H01B3/00; capacitors having potential barriers H10D1/62, H10K10/10)
- B82Y: SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- C01B: NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; {METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C}
- C30B: SINGLE-CRYSTAL GROWTH (by using ultra-high pressure, e.g. for the formation of diamonds, B01J3/06); UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL (zone-refining of metals or alloys C22B); PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE (casting of metals, casting of other substances by the same processes or devices B22D; working of plastics B29; modifying the physical structure of metals or alloys C21D, C22F); SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE (for producing semiconductor devices or parts thereof H10); APPARATUS THEREFOR
- C01P: INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
- Y10S: TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS

## Abstract

BN nanosheets are prepared by a method comprising heating to a temperature of at least 500° C., a mixture comprising: (1) an alkali borohydride, and (2) an ammonium salt. NaN3 may be included to increase the yield. No catalyst is required, and the product produced contains less than 0.1 atomic percent metal impurities.

## Claims

### Claim 1

h-BN nanosheets.

### Claim 2 (depends on 1)

The h-BN nanosheets of claim 1, wherein the h-BN nanosheets are few layer h-BN nanosheets.

### Claim 3 (depends on 2)

The h-BN nanosheets of claim 2, wherein the h-BN nanosheets have 6 to 20 layers of BN.

### Claim 4 (depends on 1)

The h-BN nanosheets of claim 1, wherein the h-BN nanosheets contain less than 0.1 atomic percent metal impurities.

### Claim 5 (depends on 1)

The h-BN nanosheets of claim 1, wherein the h-BN nanosheets do not contain r-BN, as determined by X-ray powder diffraction.

### Claim 6 (depends on 1)

The h-BN nanosheets of claim 1, wherein the h-BN nanosheets have a full width at half maximum (FWHM) of the X-ray powder diffraction pattern for a d002 peak of at most 0.50 degrees.

### Claim 7 (depends on 1)

The h-BN nanosheets of claim 1, wherein the h-BN nanosheets have a full width at half maximum (FWHM) of the X-ray powder diffraction pattern for a d002 peak of at most 0.30 degrees.

### Claim 8 (depends on 1)

The h-BN nanosheets of claim 1, wherein the h-BN nanosheets have a full width at half maximum (FWHM) of the X-ray powder diffraction pattern for a d100 peak of at most 0.50 degrees.

### Claim 9 (depends on 1)

The h-BN nanosheets of claim 1, wherein the h-BN nanosheets have a full width at half maximum (FWHM) of the X-ray powder diffraction pattern for a d100 peak of at most 0.25 degrees.

### Claim 10 (depends on 1)

The h-BN nanosheets of claim 1, wherein the h-BN nanosheets have a particle size of 250 to 900 nm. cm 11-31. (canceled)

### Claim 31

A capacitor, comprising:
(a) a substrate,
(b) a first conductive layer, on the substrate
(c) an insulating layer, on the conductive layer, and
(d) a second conductive layer, on the insulating layer,
wherein the insulating layer comprises BN nanosheets.

### Claim 32 (depends on 31)

The capacitor of claim 31, wherein the BN nanosheets are few layer h-BN nanosheets.

### Claim 33 (depends on 31)

The capacitor of claim 31, wherein the BN nanosheets have 6 to 20 layers of BN.

### Claim 34 (depends on 31)

The capacitor of claim 31, wherein the BN nanosheets contain less than 0.1 atomic percent metal impurities.

### Claim 35 (depends on 31)

The capacitor of claim 31, wherein the BN nanosheets do not contain r-BN, as determined by X-ray powder diffraction.

### Claim 36 (depends on 31)

The capacitor of claim 31, wherein the BN nanosheets have a full width at half maximum (FWHM) of the X-ray powder diffraction pattern for a d002 peak of at most 0.50 degrees.

### Claim 37 (depends on 31)

The capacitor of claim 31, wherein the BN nanosheets have a full width at half maximum (FWHM) of the X-ray powder diffraction pattern for a d002 peak of at most 0.30 degrees.

### Claim 38 (depends on 31)

The capacitor of claim 31, wherein the BN nanosheets have a full width at half maximum (FWHM) of the X-ray powder diffraction pattern for a d100 peak of at most 0.50 degrees.

### Claim 39 (depends on 31)

The capacitor of claim 31, wherein the BN nanosheets have a full width at half maximum (FWHM) of the X-ray powder diffraction pattern for a d100 peak of at most 0.25 degrees.

### Claim 40

(canceled)