# US 2019/0244754 A1 · Magnetic thin film deposition chamber and thin film deposition apparatus > Agents: this data is available as JSON from the patentgrep API and MCP server — see https://patentgrep.com/llms.txt - Number: US 2019/0244754 A1 - Document ID: US20190244754A1 - Status: Published application - Kind: A1 - Application number: 16/386,651 - Filed: 2019-04-17 - Published: 2019-08-08 - Earliest claimed: 2016-10-31 - Assignees: Beijing Naura Microelectronics Equipment Co., Ltd. - Applicants: Beijing Naura Microelectronics Equipment Co., Ltd. - Inventors: Yujie YANG; Tongwen ZHANG; Wei XIA; Peijun DING; Hougong WANG - Web page: https://patentgrep.com/patent/US20190244754A1 ## CPC - H01F 41/183: {Sputtering targets therefor} - C23C 14/351: {using a magnetic field in close vicinity to the substrate} - C23C 14/564: {Means for minimising impurities in the coating chamber such as dust, moisture, residual gases} - H01F 7/02: Permanent magnets {[PM]} - H01F 7/0273: {Magnetic circuits with PM for magnetic field generation} - H01F 41/14: for applying magnetic films to substrates - H01F 41/18: by cathode sputtering - H01F 41/22: Heat treatment; Thermal decomposition; Chemical vapour deposition - H01J 37/3435: {Target holders (includes backing plates and endblocks)} - H01J 37/3452: {Magnet distribution} - H01F: MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES - C23C: COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL (making metal-coated products by extrusion B21C23/22; covering with metal by connecting pre-existing layers to articles, see the relevant places, e.g. B21D39/00, B23K; metallising of glass C03C; metallising mortars, concrete, artificial stone, ceramics or natural stone C04B41/00; enamelling of, or applying a vitreous layer to, metals C23D; treating metal surfaces or coating of metals by electrolysis or electrophoresis C25D; single-crystal film growth C30B; by metallising textiles D06M11/83; decorating textiles by locally metallising D06Q1/04) - H01J: ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS (spark-gaps H01T; electric arc lamps H05B31/00; particle accelerators H05H) ## Abstract The present disclosure provides a magnetic thin film deposition chamber and a thin film deposition apparatus. The magnetic thin film deposition chamber includes a main chamber and a bias magnetic field device. A base pedestal is disposed in the main chamber for carrying a to-be-processed workpiece. The bias magnetic field device is configured for forming a horizontal magnetic field above the base pedestal, and the horizontal magnetic field is used to provide an in-plane anisotropy to a magnetized film layer deposited on the to-be-processed workpiece. The thin film deposition chamber provided in present disclosure is capable of forming a horizontal magnetic field above the base pedestal that is sufficient to induce an in-plane anisotropy to the magnetic thin film. ## Claims ### Claim 1 A magnetic thin film deposition chamber, comprising: a main chamber; and a bias magnetic field device, wherein: a base pedestal is disposed in the main chamber for carrying a to-be-processed workpiece, the bias magnetic field device is configured for forming a horizontal magnetic field above the base pedestal, and the horizontal magnetic field is used to provide an in-plane anisotropy to a magnetized film layer deposited on the to-be-processed workpiece. ### Claim 2 (depends on 1) The magnetic thin film deposition chamber according to claim 1, wherein: the bias magnetic field device includes a magnet assembly disposed around the base pedestal, wherein the magnet assembly is configured for forming the horizontal magnetic field above the base pedestal. ### Claim 3 (depends on 2) The magnetic thin film deposition chamber according to claim 2, wherein: the magnet assembly includes two arc-shaped magnet segments with the two arc-shaped magnet segments symmetrically disposed around the base pedestal, and an N pole of one magnet segment and an S pole of the other magnet segment both point to the base pedestal. ### Claim 4 (depends on 2) The magnetic thin film deposition chamber according to claim 2, wherein the magnet assembly includes a closed ring magnet, wherein the ring magnet forms the horizontal magnetic field through integral magnetization of a permanent magnetic material. ### Claim 5 (depends on 2) The magnetic thin film deposition chamber according to claim 2, wherein: the magnet assembly includes two sub-magnet groups each having an arc shape, wherein the two sub-magnet groups are symmetrically disposed around the base pedestal; and each sub-magnet group includes a plurality of magnetic cylinders, and the plurality of magnetic cylinders is arranged along a circumferential direction of the base pedestal. ### Claim 6 (depends on 5) The magnetic thin film deposition chamber according to claim 5, wherein: in each sub-magnet group, directions of magnetic poles of the plurality of magnetic cylinders are parallel to each other or are arranged along radial directions of the base pedestal. ### Claim 7 (depends on 6) The magnetic thin film deposition chamber according to claim 6, wherein: the plurality of magnetic cylinders are disposed horizontally; and an N pole of each magnetic cylinder in one of the two sub-magnet groups as well as an S pole of each magnetic cylinder in the other of the two sub-magnet groups all point to the base pedestal. ### Claim 8 (depends on 6) The magnetic thin film deposition chamber according to claim 6, wherein: the plurality of magnetic cylinders are disposed vertically; and an N pole of each magnetic cylinder in one of the two sub-magnet groups as well as an S pole of each magnetic cylinder in the other of the two sub-magnet groups all vertically point up. ### Claim 9 (depends on 6) The magnetic thin film deposition chamber according to claim 6, wherein: the plurality of magnetic cylinders are disposed obliquely, and an N pole of each magnetic cylinder in one of the two sub-magnet groups and an S pole of each magnetic cylinder in the other of the two sub-magnet groups all obliquely point up along a direction toward the base pedestal. ### Claim 10 (depends on 5) The magnetic thin film deposition chamber according to claim 5, wherein: in the plurality of magnetic cylinders of each sub-magnet group, a distribution density of the magnetic cylinders in a portion adjacent to two ends of the arc shape is smaller than a distribution density of the magnetic cylinders in a portion adjacent to a middle of the arc shape. ### Claim 11 (depends on 5) The magnetic thin film deposition chamber according to claim 5, wherein: the magnetic cylinders in the two sub-magnet groups are arranged: such that a distance between an N pole of any magnetic cylinder pointing to the base pedestal and an S pole, pointing to the base pedestal, of a magnetic cylinder that receives magnetic field lines emitted from the N pole is larger than or equal to a diameter of the to-be-processed workpiece. ### Claim 12 (depends on 1) The magnetic thin film deposition chamber according to any one of claim 1, wherein the bias magnetic field device includes: a support plate, configured to support the bias magnetic field device; an inner fixing plate and an outer fixing plate, disposed on the support plate and respectively located inside and outside of the magnet assembly for fixing two ends of the bias magnetic field device, respectively; an upper cover, located above the bias magnetic field device, and fixedly connected to the outer fixing plate and the inner fixing plate, respectively, wherein: the bias magnetic field device is located in a space surrounded by the support plate, the outer fixing plate, the inner fixing plate, and the upper cover. ### Claim 13 (depends on 1) The magnetic thin film deposition chamber according to any one of claim 1, wherein: the magnetic thin film deposition chamber further includes a shielding assembly, wherein: the shielding assembly is used to shield the bias magnetic field device, preventing deposition of a target material on the bias magnetic field device, the shielding assembly includes a shielding element, the shielding element including a first vertical portion, a horizontal portion, and a second vertical portion, the first vertical portion disposed around an inner side of a sidewall of the main chamber, an outer circumference of the horizontal portion connected to a lower end of the first vertical portion, and an inner circumference of the horizontal portion connected to an upper end of the second vertical portion, wherein: the horizontal portion and the second vertical portion are located above and inside the bias magnetic field device, respectively. ### Claim 14 (depends on 13) The magnetic thin film deposition chamber according to claim 13, further including a support component and a pressing ring, wherein: the pressing ring is used to press down an edge region of an upper surface of the to-be-processed workpiece; the support component is connected to a lower end of the second vertical portion, and is used to support the pressing ring; an annular boss is disposed on the inner side of the sidewall of the main chamber, and the annular boss is located below the horizontal portion and on an outer side of the second vertical portion; the bias magnetic field device is located in an annular space formed by the sidewall of the main chamber, the annular boss, the horizontal portion, and the second vertical portion; and the bias magnetic field device is in contact with an upper surface of the annular boss. ### Claim 15 (depends on 14) The magnetic thin film deposition chamber according to claim 14, wherein: a cooling channel is disposed around the inner side of the sidewall of the main chamber and/or the annular boss along a circumferential direction, wherein the cooling channel is used to introduce a cooling medium to cool the annular boss and the bias magnetic field device. ### Claim 16 (depends on 14) The magnetic thin film deposition chamber according to claim 14, wherein: a horizontal gap is formed between an inner wall of the bias magnetic field device and an outer wall of the second vertical portion; and the horizontal gap is larger than or equal to 0.5 mm. ### Claim 17 (depends on 14) The magnetic thin film deposition chamber according to claim 14, wherein: a vertical gap is between an upper surface of the bias magnetic field device and a lower surface of the horizontal portion; and the vertical gap is smaller than or equal to 5 mm. ### Claim 18 A thin film deposition apparatus, comprising at least one first deposition chamber for depositing magnetized film layers, wherein: each first deposition chamber of the at least one first deposition chamber includes: a main chamber; and a bias magnetic field device, wherein: a base pedestal is disposed in the main chamber for carrying a to-be-processed workpiece, the bias magnetic field device is configured for forming a horizontal magnetic field above the base pedestal, and the horizontal magnetic field is used to provide an in-plane anisotropy to a magnetized film layer deposited on the to-be-processed workpiece. ### Claim 19 (depends on 18) The thin film deposition apparatus according to claim 18, wherein: the thin film deposition apparatus is configured to deposit a magnetic thin film stack, wherein: the magnetic thin film stack includes a magnetism-isolation unit; the magnetism-isolation unit includes one or multiple film-layer groups; the film-layer groups include magnetized film layers and isolation layers; and the magnetized film layers and the isolation layers of multiple film-layer groups are alternately disposed, wherein the thin film deposition apparatus further includes: at least one second deposition chamber for depositing the isolation layers; and a first transfer chamber for transferring the to-be-processed workpiece between the at least one first deposition chamber and the at least one second deposition chamber. ### Claim 20 (depends on 19) The thin film deposition apparatus according to claim 19, wherein: the magnetic thin film stack further includes an adhesive layer; and the thin film deposition apparatus further includes: at least one third deposition chamber for depositing the adhesive layer; and a second transfer chamber for transferring the to-be-processed workpiece between the at least one first deposition chamber, the at least one second deposition chamber, and the at least one third deposition chamber.