Method of singulating semiconductor wafer having a plurality of die and a back layer disposed along a major surface

A method of singulating a wafer comprising:

• providing a wafer having a plurality of die formed as part of the wafer and separated from each other by spaces, wherein the wafer has a first major surface and a second major surface opposite to the first major surface, and wherein a layer of material is disposed atop the second major surface;
• placing the wafer and a first carrier substrate into contact with each other, wherein:
• the first carrier substrate comprises a first adhesive material, and
• the layer of material is disposed adjacent to the first adhesive material;
• singulating the wafer through the spaces to form singulation lines, wherein singulating includes stopping in proximity to the layer of material;
• placing the wafer and a second carrier substrate into contact with each other, wherein:
• the second carrier substrate comprises a second adhesive material having an adhesive strength that is different than that of the first adhesive material;
• the second adhesive material faces the wafer and laterally overlaps at least a portion of the wafer;
• and
• the wafer is interposed between the first carrier substrate and the second carrier substrate;
• and
• moving a mechanical device in a direction generally parallel to and adjoining one of the first carrier substrate or the second carrier substrate to separate the layer of material in the singulation lines.

A method of singulating a wafer comprising:

• providing a wafer having a first major surface, a second major surfaces, a plurality of die formed as part of the wafer, a layer of material disposed atop the second major surface, the plurality of die separated by singulation lines that terminate in proximity to the layer of material, and a first carrier substrate having a first adhesive layer adjoining the layer of material;
• providing a second carrier substrate having a second adhesive layer, wherein the second adhesive layer comprises an adhesive strength that is different than that of the first adhesive layer;
• placing the second adhesive layer proximate to the first major surface of the wafer such that the wafer is interposed between the first carrier substrate and the second carrier substrate;
• and
• moving the mechanical device in a direction generally parallel to and adjoining one of the first carrier substrate or the second carrier substrate to separate the layer of material in the singulation lines.