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AssigneeC. Uyemura & Co., Ltd.
InventorsSiego Kurosaka, Yukinori Oda
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The purpose of the present invention is to provide a heat-resistant power module substrate, a heat-resistant plating film, and plating solution capable of preventing occurrence of crack in a plating film, even if TCT with high temperature side set to 200□ or higher is performed. A heat-resistant power module substrate for mounting a power semiconductor generating high heat until maximum 300□, at least comprising: a base material composed of aluminum oxide, aluminum nitride or silicon nitride; a circuit composed of copper or aluminum and formed on the base material directly or via brazing material; and a plating film formed on a surface of the circuit, wherein the plating film is an electroless nickel-phosphorus-molybdenum plating film, and phosphorus content in the plating film is 10.5% to 13% by weight.
A heat-resistant power module substrate for mounting a power semiconductor generating high heat until maximum 300□, at least comprising:
A heat-resistant plating film to be formed on a surface of a circuit of a power module substrate for mounting a power semiconductor generating high heat until maximum 300□,
Electroless nickel-phosphorus-molybdenum plating solution for forming a heat-resistant plating film on a surface of a circuit of a power module substrate for mounting a power semiconductor generating high heat until maximum 300□, at least containing:
Dependencies are inferred from the claim text.