Metallization structure and manufacturing method thereof
AssigneeIndustrial Technology Research Institute
InventorMing-Huei Yen
Life of this patent
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Abstract
Graphene oxide is used as an insulation barrier layer for metal deposition. After patterning and modification, the chemical characteristics of graphene oxide are induced. It can be used as the catalyst for electroless plating in the metallization process, so that the metal is only deposited on the patterned area. It provides the advantages of improving reliability and yield. The metallization structure includes a substrate, a graphene oxide catalytic layer, and a metal layer. It may be widely applied to the metallization of the fine pitch metal of a semiconductor package as well as the fine pitch wires of a printed circuit board (PCB), touch panels, displays, fine electrodes of solar cells, and so on.
Claims17
A metallization structure, comprising:
- a substrate;
- a graphene oxide catalytic layer;
- and
- a metal layer,
- wherein the graphene oxide catalytic layer is disposed between the substrate and the metal layer.
A metallization structure, comprising:
- a substrate;
- a graphene oxide layer, disposed on the substrate;
- a graphene oxide catalytic layer;
- and
- a metal layer,
- wherein the graphene oxide catalytic layer is disposed between the graphene oxide layer and the metal layer.
A method for forming the metallization structure, comprising:
- providing a substrate;
- forming a graphene oxide layer on the substrate;
- modifying the graphene oxide layer to form a graphene oxide catalytic layer;
- and
- performing a metallization process on the graphene oxide catalytic layer.
Dependencies are inferred from the claim text.