Anti-interference semiconductor device for optical transceiver

An anti-interference semiconductor device for an optical transceiver, the semiconductor device comprising a backside metallization layer, a p++ carrier wafer layer, a P-type epitaxial layer, an isolation layer and a metal layer which are arranged from bottom to top;

• the backside metallization layer serves as a substrate with the p++ carrier wafer layer formed thereon, the P-type epitaxial layer is formed on the p++ carrier wafer layer, deep through-silicon vias, N-type heavily doped grooves and P-type heavily doped grooves are formed in the P-type epitaxial layer and the isolation layer, and the metal layer is formed on the isolation layer;
• the semiconductor device comprises at least two N-type heavily doped grooves, two P-type heavily doped grooves and a plurality of deep through-silicon vias, wherein the plurality of deep through-silicon vias are distributed in at least two rows, and the N-type heavily doped grooves and the P-type heavily doped grooves are alternately arranged at two sides of the deep through-silicon vias.