Rf switch with digital gate threshold voltage

A method of implementing a radio frequency (RF) switch comprising the steps of:

• forming a first switch device on an integrated circuit substrate, wherein said first switch device comprises one or more first transistors connected in series;
• forming a second switch device on said integrated circuit substrate, wherein said second switch device comprises one or more second transistors connected in series;
• connecting said first switch device between a first pad and a second pad of said integrated circuit;
• connecting said second switch device between said second pad and a third pad of said integrated circuit;
• directly connecting a first control pad of said integrated circuit for receiving a first digital control signal to a control terminal of each of said one or more first transistors of said first switch device;
• and
• directly connecting a second control pad of said integrated circuit for receiving a second digital control signal to a control terminal of each of said one or more second transistors of said second switch device, wherein a threshold voltage of each of said one or more first transistors of said first switch device and each of said one or more second transistors of said second switch device is modified to ensure switch operation in response to being directly driven by said first digital control signal or said second digital control signal.