Method of generating silicon thick electrodes with improved life performance

An electrode comprising:

• a first active layer disposed on a copper substrate, the first active layer comprising silicon (Si);
• an interlayer disposed on the first active layer such that the first active layer is located between the copper substrate and the interlayer, the interlayer comprising carbon;
• and
• a second active layer disposed on the interlayer such that the interlayer is located between the first active layer and the second active layer, the second active layer comprising Si.

A method of fabricating an electrode, the method comprising:

• disposing a first composition comprising a first active material onto a substrate;
• annealing the first composition to generate a first active layer on the substrate;
• disposing a second composition comprising a conductive material onto the first active layer;
• annealing the second composition to generate an interlayer on the first active layer;
• disposing a third composition comprising a second active material onto the interlayer;
• and
• annealing the third composition to generate a second active layer on the interlayer.