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US 2019/0198807 A1Published application
Barrier film and barrier structure including the same
AssigneeIndustrial Technology Research Institute
InventorsWen-Hung Liu, Cheng-Yi Chen, Hao-Che Kao, Hsin-Chu Chen
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Abstract
Provided is a barrier film which includes an organo-silicon polymeric composition having Si3—N4 bonds and Si—OH bonds. The peak height of Si4—N4 bonds in an infrared absorption spectrum is represented by A, and the peak height of Si—OH bonds in the infrared absorption spectrum is represented by B; and a ratio of A to B is greater than 2.
Claims20
A barrier film, comprising:
- an organo-silicon polymeric composition having Si3—N4 bonds and Si—OH bonds,
- wherein a peak height of Si4—N4 bonds in an infrared absorption spectrum is represented by A, and a peak height of Si—OH bonds in the infrared absorption spectrum is represented by B;
- and
- a ratio of A to B is greater than 2.
1 more element
A barrier structure, comprising:
- a substrate,
- a first barrier film disposed over the substrate, the first barrier film comprising a first organo-silicon polymeric composition having Si4—N4 bonds and Si—OH bonds, wherein a peak height of Si4—N4 bonds in an infrared absorption spectrum is represented by A1, a peak height of Si—OH bonds in the infrared absorption spectrum is represented by B1, and a ratio of A1 to B1 is greater than 2.
A method for forming a barrier film, comprising:
- forming an organo-silicon polymeric composition having Si4—N4 bonds and Si—OH bonds over a substrate,
- wherein a peak height of Si4—N4 bonds in an infrared absorption spectrum is represented by A, and a peak height of Si—OH bonds in the infrared absorption spectrum is represented by B;
- and
- a ratio of A to B is greater than 2.
1 more element
Dependencies are inferred from the claim text.