Organic light emitting diode display device and method of fabricating the same

A method for fabricating an organic light emitting diode (OLED) display device, the method comprising:

• (a) forming a first electrode on a substrate;
• (b) applying a photosensitive resin to the entire surface of the substrate to form a first photosensitive resin layer;
• (c) selectively exposing and developing the first photosensitive resin layer to form a first photosensitive resin pattern made of the photosensitive resin at a position other than a position where a first light emitting layer is to be formed;
• (d) depositing a thin film for a first hole injection layer, a thin film for a first hole transport layer, a first organic film, a thin film for a first electron transport layer, and a thin film for a first buffer layer in a state in which the first photosensitive resin pattern remains;
• (e) removing the thin film for the first hole injection layer, the thin film for the first hole transport layer, the first organic film, the thin film for the first electron transport layer, and the thin film for the first buffer layer deposited on an upper portion of the first photosensitive resin pattern together with the first photosensitive resin pattern through a lift-off process to form the first hole injection layer, the first hole transport layer, the first light emitting layer, the first electron transport layer, and the first buffer layer, which are formed of the thin film for the first hole injection layer, the thin film for the first hole transport layer, the first organic film, the thin film for the first electron transport layer, and the thin film for the first buffer layer, respectively, on the substrate;
• (f) forming a second hole injection layer, a second hole transport layer, a second light emitting layer, a second electron transport layer, and a second buffer layer through the same processes as (b) to (e);
• (g) forming a third hole injection layer, a third hole transport layer, a third light emitting layer, a third electron transport layer, and a third buffer layer through the same processes as (b) to (e);
• and
• (h) forming a second electrode on the first, second, and third buffer layers,
• wherein the first, second, and third buffer layers are made of a metal oxide.