Methods for fabricating artificial neural networks (ann) based on doped semiconductor elements
AssigneeInternational Business Machines Corporation
InventorsAli AFZALI-ARDAKANI, Matthew Warren COPEL, James Bowler HANNON, Satoshi OIDA
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Abstract
A method of forming a resistive random access memory (RRAM) element, the method includes forming a Silicon layer on an oxide layer, depositing a thin film dopant layer on the Silicon layer, and controlling a concentration of the dopant in the thin film dopant layer.
Claims20
A method of forming a resistive random access memory (RRAM) element, the method comprising:
- forming a Silicon layer on an oxide layer;
- depositing a thin film dopant layer on the Silicon layer;
- and
- controlling a concentration of the dopant in the thin film dopant layer.
A method of forming a resistive random access memory (RRAM), the method comprising:
- forming a plurality of resistive elements in an array, each of the resistive element formed by a method comprising:
- forming a Silicon layer on an oxide layer;
- depositing a thin film dopant layer on a Silicon layer;
- and
- controlling a concentration of the dopant in the thin film dopant layer.
A method of forming a cross bar array of a plurality of resistive random access memory (RRAM) elements, the method comprising:
- forming a Silicon layer on the oxide layer;
- depositing a thin film dopant layer on the Silicon layer;
- and
- controlling a concentration of the dopant in the thin film dopant layer for each of the resistive random access memory elements.
Dependencies are inferred from the claim text.