Methods for fabricating artificial neural networks (ann) based on doped semiconductor elements
AssigneeInternational Business Machines Corporation
InventorsAli Afzali-Ardakani, Matthew Warren Copel, James Bowler Hannon, Satoshi Oida
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Abstract
A resistive element in an artificial neural network, the resistive element includes a Silicon-on-insulator (SOI) substrate, and a Silicon layer formed on the Silicon-on-insulator substrate. The Silicon layer includes dopants derived from a thin film dopant layer, and the thin film dopant layer includes a programmed amount of dopant including at least one of Boron and Phosphorus.
Claims20
A resistive element in an artificial neural network, the resistive element, comprising:
- a Silicon-on-insulator (SOI) substrate;
- and
- a Silicon layer formed on the Silicon-on-insulator substrate,
- wherein the Silicon layer includes dopants derived from a thin film dopant layer, and
- wherein the thin film dopant layer includes a programmed amount of dopant including at least one of Boron and Phosphorus.
A resistive element, the resistive element, comprising:
- a substrate;
- and
- a Silicon layer formed on the substrate,
- wherein the Silicon layer includes dopants derived from a thin film dopant layer, and
- wherein the thin film dopant layer includes a programmed amount of dopant including at least one of Boron and Phosphorus.
An array of resistive elements, each of the resistive elements, comprising:
- a Silicon-on-insulator (SOI) substrate;
- and
- a Silicon layer formed on the Silicon-on-insulator substrate,
- wherein the Silicon layer includes dopants derived from a thin film dopant layer, and
- wherein the thin film dopant layer includes a programmed amount of dopant including at least one of Boron and Phosphorus.
Dependencies are inferred from the claim text.