Memory cells
AssigneeIntel Corporation
InventorsPengyuan Zheng, Stephen W. Russell, David R. Economy
Life of this patent
Estimating the term…
Abstract
A memory cell can include a phase change material layer and a first electrode layer adjacent to the phase change material layer and having a phase change material layer side oriented toward the phase change material layer and a bit line side opposite the phase change material layer side. A carbon nitride layer can be on the bit line side surface of the first electrode layer. In some examples, a nonconductive separator material can have a word line end and a bit line end, and can have a portion contacting the phase change material layer. The bit line end surface of the nonconductive separator material can be at least partially free of contact with the carbon nitride layer.
Claims28
A memory device, comprising:
- a plurality of memory cells comprising a phase change material layer, a first electrode layer adjacent to the phase change material layer and having a phase change material layer side oriented toward the phase change material layer and a bit line side opposite the phase change material layer side, and a carbon nitride layer on a surface of the bit line side of the first electrode layer;
- a first nonconductive separator material separating the memory cells and having a word line end and a bit line end, wherein a bit line end surface of the first nonconductive separator material is at least partially free of contact with the carbon nitride layer;
- a metal via separated from the plurality of memory cells by a second nonconductive separator material;
- and
- a metal bit line electrically connecting the metal via with the plurality of memory cells.
A method of manufacturing a memory device, comprising:
- depositing a material layer stack including a phase change material layer, a first electrode layer on the phase change material layer, and a carbon nitride layer in contact with the first electrode layer;
- dividing a first portion of the material layer stack into a plurality of memory cells;
- depositing a first nonconductive separator material between the memory cells;
- removing a second portion of the material layer stack and forming a metal via within the volume of the second portion, wherein the via is separated from the memory cells by a second nonconductive separator material;
- and
- depositing a metal bit line in contact with the carbon nitride layer of the memory cells and the metal via.
Dependencies are inferred from the claim text.