Magnetostrictive stack and corresponding bit-cell
AssigneeIntel Corporation
InventorsChia-Ching Lin, Sasikanth Manipatruni, Dmitri E. Nikonov, Ian A. Young
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AssigneeIntel Corporation
InventorsChia-Ching Lin, Sasikanth Manipatruni, Dmitri E. Nikonov, Ian A. Young
Estimating the term…
An apparatus is provided which comprises: a ferromagnetic (FM) region with magnetostrictive (MS) property; a piezo-electric (PZe) region adjacent to the FM region; and a magnetoelectric region adjacent to the FM region. An apparatus is provided which comprises: a FM region with MS property; a PZe region adjacent to the FM region; and a magnetoelectric region, wherein the FM region is at least partially adjacent to the magnetoelectric region. An apparatus is provided which comprises: a FM region with MS property; a PZe region adjacent to the FM region; a magnetoelectric region being adjacent to the FM and PZe regions; a first electrode adjacent to the FM and PZe regions; a second electrode adjacent to the magnetoelectric region; a spin orbit coupling (SOC) region adjacent to the magnetoelectric region; and a third electrode adjacent to the SOC region.
1-25. (canceled)
An apparatus comprising:
An apparatus comprising:
A system comprising:
Dependencies are inferred from the claim text.