Electronic device and method for fabricating the same

A method for fabricating an electronic device including a semiconductor memory, comprising:

• forming a conductive layer over a substrate;
• forming a material layer over the conductive layer;
• forming a variable resistance element by selectively etching the material layer, the selective etching of the material layer causing portions of the conductive layer to be exposed;
• and
• forming a lower contact plug by etching the exposed conductive layer, the lower contact plug being coupled to the variable resistance element under the variable resistance element.

An electronic device comprising a semiconductor memory, wherein the semiconductor memory comprises:

• a substrate including a source region and a drain region;
• stack structures formed over the substrate, each stack structure having a width increasing toward the substrate along a direction perpendicular to a surface of the substrate and including a variable resistance element having a resistance state depending on a voltage or current applied through the variable resistance element and a lower contact plug disposed under the variable resistance element and connecting the variable resistance element to the drain region;
• an upper contact plug formed over the stacked structure to connect the variable resistance element to a bit line;
• and
• a source line contact plug formed over the substrate and connecting the source region to a source line.