Magnetic random access memory with perpendicular enhancement layer

A magnetic memory element comprising:

• a magnetic free layer structure including one or more magnetic free layers that have a same variable magnetization direction substantially perpendicular to layer planes thereof;
• an insulating tunnel junction layer formed adjacent to said magnetic free layer structure;
• a magnetic reference layer structure including a first magnetic reference layer formed adjacent to said insulating tunnel junction layer and a second magnetic reference layer separated from said first magnetic reference layer by a first non-magnetic perpendicular enhancement layer, said first and second magnetic reference layers having a first invariable magnetization direction substantially perpendicular to layer planes thereof;
• an anti-ferromagnetic coupling layer formed adjacent to said second magnetic reference layer opposite said first non-magnetic perpendicular enhancement layer;
• a magnetic fixed layer structure formed adjacent to said anti-ferromagnetic coupling layer opposite said second magnetic reference layer, said magnetic fixed layer structure having a second invariable magnetization direction that is substantially perpendicular to a layer plane thereof and is substantially opposite to said first invariable magnetization direction;
• a seed layer made of chromium or iridium formed adjacent to said magnetic fixed layer structure opposite said anti-ferromagnetic coupling layer,
• wherein said first and second magnetic reference layers have different compositions.