High voltage monolithic led chip with improved reliability

A monolithic LED chip, comprising:

• a plurality of active regions on a submount;
• interconnection layers between said active regions that carry an electrical signal to and are in electrical contact with said active regions, wherein said interconnect layers interconnect said active regions from a same side of said active regions and interconnect said active regions in series;
• and
• a reflective layer positioned below one or more streets between adjacent ones of said plurality of active regions and around the edge of one or more said plurality of active regions, said reflective layer positioned to reflect LED chip light that would otherwise reach said interconnection layers.

A monolithic LED chip, comprising:

• a plurality of active regions on a submount;
• integral electrically conductive interconnect elements between said active regions, wherein said interconnect elements are in electrical contact with said active regions on a same side of said active regions wherein, wherein said interconnect elements comprise a material and/or structure that resists electromigration;
• and
• a reflective layer at least partially between said interconnect elements and said active regions, wherein said reflective layer is distinct from said interconnect elements.