Group iii nitride semiconductor light-emitting element and wafer including such element configuration
AssigneeStanley Electric Co., Ltd.
InventorTomoaki SATO
Life of this patent
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Abstract
A group III nitride semiconductor light-emitting element is provided which includes an active layer between an n-type layer and a p-type layer, an n-electrode on the n-type layer, and a p-electrode on the p-type layer, and having a mesa structure including the p-type layer, and is characterized in that: the p-electrode has, in a top view of the group III nitride semiconductor light-emitting element, a protruding portion in a mesa end direction and an n-electrode non-formation region in the vicinity of the mesa end of a projecting end portion of the protruding portion.
Claims5
1-5. (canceled)
A group III nitride semiconductor light-emitting element comprising:
- a substrate;
- a semiconductor structure formed on the substrate, the semiconductor structure having an n-type layer, an active layer and a p-type layer stacked in this order, parts of the active and p-type layers being so removed that a part of the n-type layer is exposed through the removed portions of the active and p-type layers and the active and p-type layers form a mesa structure;
- a p-electrode formed on the p-type layer;
- and
- an n-electrode formed on the exposed surface of the n-type layer,
- wherein the mesa structure includes projection parts, each surrounded by the n-type layer in top view, and the n-electrode is disposed more than 50 μm away from each one of the projection parts.
Dependencies are inferred from the claim text.